Tag Archives: black phosphorus

Hacking the human brain with a junction-based artificial synaptic device

Earlier today I published a piece featuring Dr. Wei Lu’s work on memristors and the movement to create an artificial brain (my June 28, 2017 posting: Dr. Wei Lu and bio-inspired ‘memristor’ chips). For this posting I’m featuring a non-memristor (if I’ve properly understood the technology) type of artificial synapse. From a June 28, 2017 news item on Nanowerk,

One of the greatest challenges facing artificial intelligence development is understanding the human brain and figuring out how to mimic it.

Now, one group reports in ACS Nano (“Emulating Bilingual Synaptic Response Using a Junction-Based Artificial Synaptic Device”) that they have developed an artificial synapse capable of simulating a fundamental function of our nervous system — the release of inhibitory and stimulatory signals from the same “pre-synaptic” terminal.

Unfortunately, the American Chemical Society news release on EurekAlert, which originated the news item, doesn’t provide too much more detail,

The human nervous system is made up of over 100 trillion synapses, structures that allow neurons to pass electrical and chemical signals to one another. In mammals, these synapses can initiate and inhibit biological messages. Many synapses just relay one type of signal, whereas others can convey both types simultaneously or can switch between the two. To develop artificial intelligence systems that better mimic human learning, cognition and image recognition, researchers are imitating synapses in the lab with electronic components. Most current artificial synapses, however, are only capable of delivering one type of signal. So, Han Wang, Jing Guo and colleagues sought to create an artificial synapse that can reconfigurably send stimulatory and inhibitory signals.

The researchers developed a synaptic device that can reconfigure itself based on voltages applied at the input terminal of the device. A junction made of black phosphorus and tin selenide enables switching between the excitatory and inhibitory signals. This new device is flexible and versatile, which is highly desirable in artificial neural networks. In addition, the artificial synapses may simplify the design and functions of nervous system simulations.

Here’s how I concluded that this is not a memristor-type device (from the paper [first paragraph, final sentence]; a link and citation will follow; Note: Links have been removed)),

The conventional memristor-type [emphasis mine](14-20) and transistor-type(21-25) artificial synapses can realize synaptic functions in a single semiconductor device but lacks the ability [emphasis mine] to dynamically reconfigure between excitatory and inhibitory responses without the addition of a modulating terminal.

Here’s a link to and a citation for the paper,

Emulating Bilingual Synaptic Response Using a Junction-Based Artificial Synaptic Device by
He Tian, Xi Cao, Yujun Xie, Xiaodong Yan, Andrew Kostelec, Don DiMarzio, Cheng Chang, Li-Dong Zhao, Wei Wu, Jesse Tice, Judy J. Cha, Jing Guo, and Han Wang. ACS Nano, Article ASAP DOI: 10.1021/acsnano.7b03033 Publication Date (Web): June 28, 2017

Copyright © 2017 American Chemical Society

This paper is behind a paywall.

Replace silicon with black phosphorus instead of graphene?

I have two black phosphorus pieces. This first piece of research comes out of ‘La belle province’ or, as it’s more usually called, Québec (Canada).

Foundational research on phosphorene

There’s a lot of interest in replacing silicon for a number of reasons and, increasingly, there’s interest in finding an alternative to graphene.

A July 7, 2015 news item on Nanotechnology Now describes a new material for use as transistors,

As scientists continue to hunt for a material that will make it possible to pack more transistors on a chip, new research from McGill University and Université de Montréal adds to evidence that black phosphorus could emerge as a strong candidate.

In a study published today in Nature Communications, the researchers report that when electrons move in a phosphorus transistor, they do so only in two dimensions. The finding suggests that black phosphorus could help engineers surmount one of the big challenges for future electronics: designing energy-efficient transistors.

A July 7, 2015 McGill University news release on EurekAlert, which originated the news item, describes the field of 2D materials and the research into black phosphorus and its 2D version, phosperene (analogous to graphite and graphene),

“Transistors work more efficiently when they are thin, with electrons moving in only two dimensions,” says Thomas Szkopek, an associate professor in McGill’s Department of Electrical and Computer Engineering and senior author of the new study. “Nothing gets thinner than a single layer of atoms.”

In 2004, physicists at the University of Manchester in the U.K. first isolated and explored the remarkable properties of graphene — a one-atom-thick layer of carbon. Since then scientists have rushed to to investigate a range of other two-dimensional materials. One of those is black phosphorus, a form of phosphorus that is similar to graphite and can be separated easily into single atomic layers, known as phosphorene.

Phosphorene has sparked growing interest because it overcomes many of the challenges of using graphene in electronics. Unlike graphene, which acts like a metal, black phosphorus is a natural semiconductor: it can be readily switched on and off.

“To lower the operating voltage of transistors, and thereby reduce the heat they generate, we have to get closer and closer to designing the transistor at the atomic level,” Szkopek says. “The toolbox of the future for transistor designers will require a variety of atomic-layered materials: an ideal semiconductor, an ideal metal, and an ideal dielectric. All three components must be optimized for a well designed transistor. Black phosphorus fills the semiconducting-material role.”

The work resulted from a multidisciplinary collaboration among Szkopek’s nanoelectronics research group, the nanoscience lab of McGill Physics Prof. Guillaume Gervais, and the nanostructures research group of Prof. Richard Martel in Université de Montréal’s Department of Chemistry.

To examine how the electrons move in a phosphorus transistor, the researchers observed them under the influence of a magnetic field in experiments performed at the National High Magnetic Field Laboratory in Tallahassee, FL, the largest and highest-powered magnet laboratory in the world. This research “provides important insights into the fundamental physics that dictate the behavior of black phosphorus,” says Tim Murphy, DC Field Facility Director at the Florida facility.

“What’s surprising in these results is that the electrons are able to be pulled into a sheet of charge which is two-dimensional, even though they occupy a volume that is several atomic layers in thickness,” Szkopek says. That finding is significant because it could potentially facilitate manufacturing the material — though at this point “no one knows how to manufacture this material on a large scale.”

“There is a great emerging interest around the world in black phosphorus,” Szkopek says. “We are still a long way from seeing atomic layer transistors in a commercial product, but we have now moved one step closer.”

Here’s a link to and a citation for the paper,

Two-dimensional magnetotransport in a black phosphorus naked quantum well by V. Tayari, N. Hemsworth, I. Fakih, A. Favron, E. Gaufrès, G. Gervais, R. Martel & T. Szkopek. Nature Communications 6, Article number: 7702 doi:10.1038/ncomms8702 Published 07 July 2015

This is an open access paper.

The second piece of research into black phosphorus is courtesy of an international collaboration.

A phosporene transistor

A July 9, 2015 Technical University of Munich (TUM) press release (also on EurekAlert) describes the formation of a phosphorene transistor made possible by the introduction of arsenic,

Chemists at the Technische Universität München (TUM) have now developed a semiconducting material in which individual phosphorus atoms are replaced by arsenic. In a collaborative international effort, American colleagues have built the first field-effect transistors from the new material.

For many decades silicon has formed the basis of modern electronics. To date silicon technology could provide ever tinier transistors for smaller and smaller devices. But the size of silicon transistors is reaching its physical limit. Also, consumers would like to have flexible devices, devices that can be incorporated into clothing and the likes. However, silicon is hard and brittle. All this has triggered a race for new materials that might one day replace silicon.

Black arsenic phosphorus might be such a material. Like graphene, which consists of a single layer of carbon atoms, it forms extremely thin layers. The array of possible applications ranges from transistors and sensors to mechanically flexible semiconductor devices. Unlike graphene, whose electronic properties are similar to those of metals, black arsenic phosphorus behaves like a semiconductor.

The press release goes on to provide more detail about the collaboration and the research,

A cooperation between the Technical University of Munich and the University of Regensburg on the German side and the University of Southern California (USC) and Yale University in the United States has now, for the first time, produced a field effect transistor made of black arsenic phosphorus. The compounds were synthesized by Marianne Koepf at the laboratory of the research group for Synthesis and Characterization of Innovative Materials at the TUM. The field effect transistors were built and characterized by a group headed by Professor Zhou and Dr. Liu at the Department of Electrical Engineering at USC.

The new technology developed at TUM allows the synthesis of black arsenic phosphorus without high pressure. This requires less energy and is cheaper. The gap between valence and conduction bands can be precisely controlled by adjusting the arsenic concentration. “This allows us to produce materials with previously unattainable electronic and optical properties in an energy window that was hitherto inaccessible,” says Professor Tom Nilges, head of the research group for Synthesis and Characterization of Innovative Materials.

Detectors for infrared

With an arsenic concentration of 83 percent the material exhibits an extremely small band gap of only 0.15 electron volts, making it predestined for sensors which can detect long wavelength infrared radiation. LiDAR (Light Detection and Ranging) sensors operate in this wavelength range, for example. They are used, among other things, as distance sensors in automobiles. Another application is the measurement of dust particles and trace gases in environmental monitoring.

A further interesting aspect of these new, two-dimensional semiconductors is their anisotropic electronic and optical behavior. The material exhibits different characteristics along the x- and y-axes in the same plane. To produce graphene like films the material can be peeled off in ultra thin layers. The thinnest films obtained so far are only two atomic layers thick.

Here’s a link to and a citation for the paper,

Black Arsenic–Phosphorus: Layered Anisotropic Infrared Semiconductors with Highly Tunable Compositions and Properties by Bilu Liu, Marianne Köpf, Ahmad N. Abbas, Xiaomu Wang, Qiushi Guo, Yichen Jia, Fengnian Xia, Richard Weihrich, Frederik Bachhuber, Florian Pielnhofer, Han Wang, Rohan Dhall, Stephen B. Cronin, Mingyuan Ge1 Xin Fang, Tom Nilges, and Chongwu Zhou. DOI: 10.1002/adma.201501758 Article first published online: 25 JUN 2015

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

This paper is behind a paywall.

Dexter Johnson, on his Nanoclast blog (on the Institute for Electrical and Electronics Engineers website), adds more information about black phosphorus and its electrical properties in his July 9, 2015 posting about the Germany/US collaboration (Note: Links have been removed),

Black phosphorus has been around for about 100 years, but recently it has been synthesized as a two-dimensional material—dubbed phosphorene in reference to its two-dimensional cousin, graphene. Black phosphorus is quite attractive for electronic applications like field-effect transistors because of its inherent band gap and it is one of the few 2-D materials to be a natively p-type semiconductor.

One final comment, I notice the Germany-US work was published weeks prior to the Canadian research suggesting that the TUM July 9, 2015 press release is an attempt to capitalize on the interest generated by the Canadian research. That’s a smart move.

A race to find substitutes for graphene?

I have two items concerning research which seeks to replace graphene in one application or other.

Black phosporus and the École Polytechniqe de Montréal

A June 2, 2015 news item on Nanotechnology Now features work on developing a two-dimensional black phosphorus material, 2D phosphane,

A team of researchers from Universite de Montreal, Polytechnique Montreal and the Centre national de la recherche scientifique (CNRS) in France is the first to succeed in preventing two-dimensional layers of black phosphorus from oxidating. In so doing, they have opened the doors to exploiting their striking properties in a number of electronic and optoelectronic devices. …

Black phosphorus, a stable allotrope of phosphorus that presents a lamellar structure similar to that of graphite, has recently begun to capture the attention of physicists and materials researchers. It is possible to obtain single atomic layers from it, which researchers call 2D phosphane. A cousin of the widely publicized graphene, 2D phosphane brings together two very sought-after properties for device design.

A June 2, 2015 École Polytechniqe de Montréal news release, which originated the news item, expands on why 2D phosphane is an appealing material,

First, 2D phosphane is a semiconductor material that provides the necessary characteristics for making transistors and processors. With its high-mobility, it is estimated that 2D phosphane could form the basis for electronics that is both high-performance and low-cost.

Furthermore, this new material features a second, even more distinctive, characteristic: its interaction with light depends on the number of atomic layers used. One monolayer will emit red light, whereas a thicker sample will emit into the infrared. This variation makes it possible to manufacture a wide range of optoelectronic devices, such as lasers or detectors, in a strategic fraction of the electromagnetic spectrum.

The news release goes on to describe an important issue with phosphane and how the scientists addressed it,

Until now, the study of 2D phosphane’s properties was slowed by a major problem: in ambient  conditions, very thin layers of the material would degrade, to the point of compromising its future in the industry despite its promising potential.

As such, the research team has made a major step forward by succeeding in determining the physical mechanisms at play in this degradation, and in identifying the key elements that lead to the layers’ oxidation.

“We have demonstrated that 2D phosphane undergoes oxidation under ambient conditions, caused jointly by the presence of oxygen, water and light. We have also characterized the phenomenon’s evolution over time by using electron beam spectroscopy and Raman spectroscopy,” reports Professor Richard Martel of Université de Montréal’s Department of Chemistry.

Next, the researchers developed an efficient procedure for producing these very fragile single-atom layers and keeping them intact.

“We were able to study the vibration modes of the atoms in this new material. Since earlier studies had been carried out on heavily degraded materials, we revealed the as-yet-unsuspected effects of quantum confinement on atoms’ vibration modes,” notes Professor Sébastien Francoeur of Polytechnique’s Department of Engineering Physics.

The study’s results will help the world scientific community develop 2D phosphane’s very special properties with the aim of developing new nanotechnologies that could give rise to high-performance microprocessors, lasers, solar cells and more.

Here’s a link to and a citation for the paper,

Photooxidation and quantum confinement effects in exfoliated black phosphorus by Alexandre Favron, Etienne Gaufrès, Frédéric Fossard, Anne-Laurence Phaneuf-L’Heureux, Nathalie Y-W. Tang, Pierre L. Lévesque, Annick Loiseau, Richard Leonelli, Sébastien Francoeur, & Richard Martel. Nature Materials (2015)  doi:10.1038/nmat4299 Published online 25 May 2015

This paper is behind a paywall.

Now. for the second item about replacing graphene.

China’s new aerogel, a rival to graphene aerogels?

A June 2, 2015 American Institute of Physics news release (also on EurekAlert) describes research into an alternative to expensive graphene aerogels,

The electromagnetic radiation discharged by electronic equipment and devices is known to hinder their smooth operation. Conventional materials used today to shield from incoming electromagnetic waves tend to be sheets of metal or composites, which rely on reflection as a shielding mechanism.

But now, materials such as graphene aerogels are gaining traction as more desirable alternatives because they act as electromagnetic absorbers. They’re widely expected to improve energy storage, sensors, nanoelectronics, catalysis and separations, but graphene aerogels are prohibitively expensive and difficult to produce for large-scale applications because of the complicated purification and functionalization steps involved in their fabrication.

So a team of researchers in China set out to design a cheaper material with properties similar to a graphene aerogel–in terms of its conductivity, as well as a lightweight, anticorrosive, porous structure. In the journal Applied Physics Letters, from AIP Publishing, the researchers describe the new material they created and its performance.

Aming Xie, an expert in organic chemistry, and Fan Wu, both affiliated with PLA University of Science and Technology, worked with colleagues at Nanjing University of Science and Technology to tap into organic chemistry and conducting polymers to fabricate a three-dimensional (3-D) polypyrrole (PPy) aerogel-based electromagnetic absorber.

They chose to concentrate on this method because it enables them to “regulate the density and dielectric property of conducting polymers through the formation of pores during the oxidation polymerization of the pyrrole monomer,” explained Wu.

And the fabrication process is a simple one. “It requires only four common chemical reagents: pyrrole, ferric chloride (FeCl3), ethanol and water — which makes it cheap enough and enables large-scale fabrication,” Wu said. “We’re also able to pour the FeCl3 solution directly into the pyrrole solution — not drop by drop — to force the pyrrole to polymerize into a 3-D aerogel rather than PPy particles.”

In short, the team’s 3-D PPy aerogel is designed to exhibit “desirable properties such as a porous structure and low density,” Wu noted.

Beyond that, its electromagnetic absorption performance — with low loss — shows great promise. “We believe a ‘wide’ absorption range is more useful than high absorption within one frequency,” Wu said. Compared with previous works, the team’s new aerogel has the lowest adjunction and widest effective bandwidth — with a reflection loss below -10 decibels.

In terms of applications, based on the combination of low adjunction and a “wide” effective bandwidth, the researchers expect to see their 3-D PPy aerogel used in surface coatings for aircraft.

Another potential application is as coatings within the realm of corrosion prevention and control. “Common anticorrosion coatings contain a large amount of zinc (70 to 80 percent by weight), and these particles not only serve as a cathode by corroding to protect the iron structure but also to maintain a suitable conductivity for the electrochemistry process,” Wu pointed out. “If our 3-D PPy aerogel could build a conductivity network in this type of coating, the loss of zinc particles could be rapidly reduced.”

The team is now taking their work a step further by pursuing a 3-D PPy/PEDOT-based (poly(3,4-ethylenedioxythiophene) electromagnetic absorber. “Our goal is to grow solid-state polymerized PEDOT particles in the holes of the 3-D PPy aerogel formed by PPy chains,” Wu added.

Here’s a link to and a citation for the paper,

Self-assembled ultralight three-dimensional polypyrrole aerogel for effective electromagnetic absorption by Aming Xie, Fan Wu, Mengxiao Sun, Xiaoqing Dai, Zhuanghu Xu, Yanyu Qiu, Yuan Wang, and Mingyang Wang. Appl. Phys. Lett. 106, 222902 (2015); http://dx.doi.org/10.1063/1.4921180

This paper is open access.