Tag Archives: carbon nanotube transistors

Carbon nanotubes that can outperform silicon

According to a Sept. 2, 2016 news item on phys.org, researchers at the University of Wisconsin-Madison have produced carbon nanotube transistors that outperform state-of-the-art silicon transistors,

For decades, scientists have tried to harness the unique properties of carbon nanotubes to create high-performance electronics that are faster or consume less power—resulting in longer battery life, faster wireless communication and faster processing speeds for devices like smartphones and laptops.

But a number of challenges have impeded the development of high-performance transistors made of carbon nanotubes, tiny cylinders made of carbon just one atom thick. Consequently, their performance has lagged far behind semiconductors such as silicon and gallium arsenide used in computer chips and personal electronics.

Now, for the first time, University of Wisconsin-Madison materials engineers have created carbon nanotube transistors that outperform state-of-the-art silicon transistors.

Led by Michael Arnold and Padma Gopalan, UW-Madison professors of materials science and engineering, the team’s carbon nanotube transistors achieved current that’s 1.9 times higher than silicon transistors. …

A Sept. 2, 2016 University of Wisconsin-Madison news release (also on EurekAlert) by Adam Malecek, which originated the news item, describes the research in more detail and notes that the technology has been patented,

“This achievement has been a dream of nanotechnology for the last 20 years,” says Arnold. “Making carbon nanotube transistors that are better than silicon transistors is a big milestone. This breakthrough in carbon nanotube transistor performance is a critical advance toward exploiting carbon nanotubes in logic, high-speed communications, and other semiconductor electronics technologies.”

This advance could pave the way for carbon nanotube transistors to replace silicon transistors and continue delivering the performance gains the computer industry relies on and that consumers demand. The new transistors are particularly promising for wireless communications technologies that require a lot of current flowing across a relatively small area.

As some of the best electrical conductors ever discovered, carbon nanotubes have long been recognized as a promising material for next-generation transistors.

Carbon nanotube transistors should be able to perform five times faster or use five times less energy than silicon transistors, according to extrapolations from single nanotube measurements. The nanotube’s ultra-small dimension makes it possible to rapidly change a current signal traveling across it, which could lead to substantial gains in the bandwidth of wireless communications devices.

But researchers have struggled to isolate purely carbon nanotubes, which are crucial, because metallic nanotube impurities act like copper wires and disrupt their semiconducting properties — like a short in an electronic device.

The UW–Madison team used polymers to selectively sort out the semiconducting nanotubes, achieving a solution of ultra-high-purity semiconducting carbon nanotubes.

“We’ve identified specific conditions in which you can get rid of nearly all metallic nanotubes, where we have less than 0.01 percent metallic nanotubes,” says Arnold.

Placement and alignment of the nanotubes is also difficult to control.

To make a good transistor, the nanotubes need to be aligned in just the right order, with just the right spacing, when assembled on a wafer. In 2014, the UW–Madison researchers overcame that challenge when they announced a technique, called “floating evaporative self-assembly,” that gives them this control.

The nanotubes must make good electrical contacts with the metal electrodes of the transistor. Because the polymer the UW–Madison researchers use to isolate the semiconducting nanotubes also acts like an insulating layer between the nanotubes and the electrodes, the team “baked” the nanotube arrays in a vacuum oven to remove the insulating layer. The result: excellent electrical contacts to the nanotubes.

The researchers also developed a treatment that removes residues from the nanotubes after they’re processed in solution.

“In our research, we’ve shown that we can simultaneously overcome all of these challenges of working with nanotubes, and that has allowed us to create these groundbreaking carbon nanotube transistors that surpass silicon and gallium arsenide transistors,” says Arnold.

The researchers benchmarked their carbon nanotube transistor against a silicon transistor of the same size, geometry and leakage current in order to make an apples-to-apples comparison.

They are continuing to work on adapting their device to match the geometry used in silicon transistors, which get smaller with each new generation. Work is also underway to develop high-performance radio frequency amplifiers that may be able to boost a cellphone signal. While the researchers have already scaled their alignment and deposition process to 1 inch by 1 inch wafers, they’re working on scaling the process up for commercial production.

Arnold says it’s exciting to finally reach the point where researchers can exploit the nanotubes to attain performance gains in actual technologies.

“There has been a lot of hype about carbon nanotubes that hasn’t been realized, and that has kind of soured many people’s outlook,” says Arnold. “But we think the hype is deserved. It has just taken decades of work for the materials science to catch up and allow us to effectively harness these materials.”

The researchers have patented their technology through the Wisconsin Alumni Research Foundation.

Interestingly, at least some of the research was publicly funded according to the news release,

Funding from the National Science Foundation, the Army Research Office and the Air Force supported their work.

Will the public ever benefit financially from this research?

IBM, the Cognitive Era, and carbon nanotube electronics

IBM has a storied position in the field of nanotechnology due to the scanning tunneling microscope developed in the company’s laboratories. It was a Nobel Prize-winning breakthough which provided the impetus for nanotechnology applied research. Now, an Oct. 1, 2015 news item on Nanowerk trumpets another IBM breakthrough,

IBM Research today [Oct. 1, 2015] announced a major engineering breakthrough that could accelerate carbon nanotubes replacing silicon transistors to power future computing technologies.

IBM scientists demonstrated a new way to shrink transistor contacts without reducing performance of carbon nanotube devices, opening a pathway to dramatically faster, smaller and more powerful computer chips beyond the capabilities of traditional semiconductors.

While the Oct. 1, 2015 IBM news release, which originated the news item, does go on at length there’s not much technical detail (see the second to last paragraph in the excerpt for the little they do include) about the research breakthrough (Note: Links have been removed),

IBM’s breakthrough overcomes a major hurdle that silicon and any semiconductor transistor technologies face when scaling down. In any transistor, two things scale: the channel and its two contacts. As devices become smaller, increased contact resistance for carbon nanotubes has hindered performance gains until now. These results could overcome contact resistance challenges all the way to the 1.8 nanometer node – four technology generations away. [emphasis mine]

Carbon nanotube chips could greatly improve the capabilities of high performance computers, enabling Big Data to be analyzed faster, increasing the power and battery life of mobile devices and the Internet of Things, and allowing cloud data centers to deliver services more efficiently and economically.

Silicon transistors, tiny switches that carry information on a chip, have been made smaller year after year, but they are approaching a point of physical limitation. With Moore’s Law running out of steam, shrinking the size of the transistor – including the channels and contacts – without compromising performance has been a vexing challenge troubling researchers for decades.

IBM has previously shown that carbon nanotube transistors can operate as excellent switches at channel dimensions of less than ten nanometers – the equivalent to 10,000 times thinner than a strand of human hair and less than half the size of today’s leading silicon technology. IBM’s new contact approach overcomes the other major hurdle in incorporating carbon nanotubes into semiconductor devices, which could result in smaller chips with greater performance and lower power consumption.

Earlier this summer, IBM unveiled the first 7 nanometer node silicon test chip [emphasis mine], pushing the limits of silicon technologies and ensuring further innovations for IBM Systems and the IT industry. By advancing research of carbon nanotubes to replace traditional silicon devices, IBM is paving the way for a post-silicon future and delivering on its $3 billion chip R&D investment announced in July 2014.

“These chip innovations are necessary to meet the emerging demands of cloud computing, Internet of Things and Big Data systems,” said Dario Gil, vice president of Science & Technology at IBM Research. “As silicon technology nears its physical limits, new materials, devices and circuit architectures must be ready to deliver the advanced technologies that will be required by the Cognitive Computing era. This breakthrough shows that computer chips made of carbon nanotubes will be able to power systems of the future sooner than the industry expected.”

A New Contact for Carbon Nanotubes

Carbon nanotubes represent a new class of semiconductor materials that consist of single atomic sheets of carbon rolled up into a tube. The carbon nanotubes form the core of a transistor device whose superior electrical properties promise several generations of technology scaling beyond the physical limits of silicon.

Electrons in carbon transistors can move more easily than in silicon-based devices, and the ultra-thin body of carbon nanotubes provide additional advantages at the atomic scale. Inside a chip, contacts are the valves that control the flow of electrons from metal into the channels of a semiconductor. As transistors shrink in size, electrical resistance increases within the contacts, which impedes performance. Until now, decreasing the size of the contacts on a device caused a commensurate drop in performance – a challenge facing both silicon and carbon nanotube transistor technologies.

IBM researchers had to forego traditional contact schemes and invented a metallurgical process akin to microscopic welding that chemically binds the metal atoms to the carbon atoms at the ends of nanotubes. This ‘end-bonded contact scheme’ allows the contacts to be shrunken down to below 10 nanometers without deteriorating performance of the carbon nanotube devices.

“For any advanced transistor technology, the increase in contact resistance due to the decrease in the size of transistors becomes a major performance bottleneck,” Gil added. “Our novel approach is to make the contact from the end of the carbon nanotube, which we show does not degrade device performance. This brings us a step closer to the goal of a carbon nanotube technology within the decade.”

Every once in a while, the size gets to me and a 1.8nm node is amazing. As for IBM’s 7nm chip, which was previewed this summer, there’s more about that in my July 15, 2015 posting.

Here’s a link to and a citation for the IBM paper,

End-bonded contacts for carbon nanotube transistors with low, size-independent resistance by Qing Cao, Shu-Jen Han, Jerry Tersoff, Aaron D. Franklin†, Yu Zhu, Zhen Zhang‡, George S. Tulevski, Jianshi Tang, and Wilfried Haensch. Science 2 October 2015: Vol. 350 no. 6256 pp. 68-72 DOI: 10.1126/science.aac8006

This paper is behind a paywall.