Tag Archives: gallium nitride

Flat gallium (gallenene) and nanoelectronics

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Another day, another 2D material. A March 9, 2018 news item on ScienceDaily announced the latest thin material from Rice university,

Scientists at Rice University and the Indian Institute of Science, Bangalore, have discovered a method to make atomically flat gallium that shows promise for nanoscale electronics.

The Rice lab of materials scientist Pulickel Ajayan and colleagues in India created two-dimensional gallenene, a thin film of conductive material that is to gallium what graphene is to carbon.

Extracted into a two-dimensional form, the novel material appears to have an affinity for binding with semiconductors like silicon and could make an efficient metal contact in two-dimensional electronic devices, the researchers said.

A March 9, 2018 Rice University news release (also on EurekAlert), which originated the news item, describes the process for creating gallenene,

Gallium is a metal with a low melting point; unlike graphene and many other 2-D structures, it cannot yet be grown with vapor phase deposition methods. Moreover, gallium also has a tendency to oxidize quickly. And while early samples of graphene were removed from graphite with adhesive tape, the bonds between gallium layers are too strong for such a simple approach.

So the Rice team led by co-authors Vidya Kochat, a former postdoctoral researcher at Rice, and Atanu Samanta, a student at the Indian Institute of Science, used heat instead of force.

Rather than a bottom-up approach, the researchers worked their way down from bulk gallium by heating it to 29.7 degrees Celsius (about 85 degrees Fahrenheit), just below the element’s melting point. That was enough to drip gallium onto a glass slide. As a drop cooled just a bit, the researchers pressed a flat piece of silicon dioxide on top to lift just a few flat layers of gallenene.

They successfully exfoliated gallenene onto other substrates, including gallium nitride, gallium arsenide, silicone and nickel. That allowed them to confirm that particular gallenene-substrate combinations have different electronic properties and to suggest that these properties can be tuned for applications.

“The current work utilizes the weak interfaces of solids and liquids to separate thin 2-D sheets of gallium,” said Chandra Sekhar Tiwary, principal investigator on the project he completed at Rice before becoming an assistant professor at the Indian Institute of Technology in Gandhinagar, India. “The same method can be explored for other metals and compounds with low melting points.”

Gallenene’s plasmonic and other properties are being investigated, according to Ajayan. “Near 2-D metals are difficult to extract, since these are mostly high-strength, nonlayered structures, so gallenene is an exception that could bridge the need for metals in the 2-D world,” he said.

Co-authors of the paper are graduate student Yuan Zhang and Associate Research Professor Robert Vajtai of Rice; Anthony Stender, a former Rice postdoctoral researcher and now an assistant professor at Ohio University; Sanjit Bhowmick, Praveena Manimunda and Syed Asif of Bruker Nano Surfaces, Minneapolis; and Rice alumnus Abhishek Singh of the Indian Institute of Science. Ajayan is chair of Rice’s Department of Materials Science and NanoEngineering, the Benjamin M. and Mary Greenwood Anderson Professor in Engineering and a professor of chemistry.

The Air Force Office of Scientific Research sponsored the research, with additional support from the Indo-US Science and Technology Forum, the government of India and a Rice Center for Quantum Materials/Smalley-Curl Postdoctoral Fellowship in Quantum Materials.

Here’s a link to and a citation for the paper,

Atomically thin gallium layers from solid-melt exfoliation by Vidya Kochat, Atanu Samanta, Yuan Zhang, Sanjit Bhowmick, Praveena Manimunda, Syed Asif S. Asif, Anthony S. Stender, Robert Vajtai, Abhishek K. Singh, Chandra S. Tiwary, and Pulickel M. Ajayan. Science Advances 09 Mar 2018: Vol. 4, no. 3, e1701373 DOI: 10.1126/sciadv.1701373

This paper appears to be open access.

Thermal bottleneck opens up at US Dept.of Energy

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Heat is always an issue with electronics and as the devices get smaller and smaller, it becomes a more pressing problem. From the March 13, 2012 news item on Nanowerk,

For decades, engineers have sought to build more efficient electronic devices by reducing the size of their components. In the process of doing so, however, researchers have reached a “thermal bottleneck,” said Argonne [US Dept. of Energy, Argonne Laboratory] nanoscientist Anirudha Sumant.

In a thermal bottleneck, the excess heat generated in the device causes undesirable effects that affect its performance. “Unless we come-up with innovative ways to suck the heat off of our electronics, we are pretty much stuck with this bottleneck,” Sumant explained.

Diamond films have excited interest in the scientific community as a solution to thermal bottlenecks, from the news item,

The unusually attractive thermal properties of diamond thin films have led scientists to suggest using this material as a heat sink that could be integrated with a number of different semiconducting materials. However, the deposition temperatures for the diamond films typically exceed 800 degrees Celsius—roughly 1500 degrees Fahrenheit, which limits the feasibility of this approach.

Reducing the deposition temperature to 400 degrees Celsius would allow for integration of diamond materials with a whole range of semiconductor materials.  A new technique that allows just that thing has been developed (from the news item),

By using a new technique that altered the deposition process of the diamond films, Sumant and his colleagues at Argonne’s Center for Nanoscale Materials were able to both reduce the temperature to close to 400 degrees Celsius and to tune the thermal properties of the diamond films by controlling their grain size. This permitted the eventual combination of the diamond with two other important materials: graphene and gallium nitride.

According to Sumant, diamond has much better heat conduction properties than silicon or silicon oxide, which were traditionally used for fabrication of graphene devices. As a result of better heat removal, graphene devices fabricated on diamond can sustain much higher current densities.

In the other study, Sumant used the same technology to combine diamond thin films with gallium nitride, which is used extensively in high-power light emitting devices (LED). After depositing a 300 nm-thick diamond film on a gallium nitride substrate, Sumant and his colleagues noticed a considerable improvement in the thermal performance. Because a difference within an integrated circuit of just a few degrees can cause a noticeable change in performance, he called this result “remarkable.”

There are two published papers on the technique, one focusing on the graphene application and the other on the gallium nitride application. The first is in Nano Letters, 2012, 12 (3), pp 1603–1608, DOI: 10.1021/nl204545q, (“Graphene-on-Diamond Devices with Increased Current-Carrying Capacity: Carbon sp2-on-sp3Technology”, and the other is in Advanced Functional Materials, first published online: 1 FEB 2012, DOI: 10.1002/adfm.201102786,  (“Direct Low-Temperature Integration of Nanocrystalline Diamond with GaN Substrates for Improved Thermal Management of High-Power Electronics”).