Tag Archives: inductor

X-rays reveal memristor workings

Leave a reply

A June 14, 2016 news item on ScienceDaily focuses on memristors. (It’s been about two months since my last memristor posting on April 22, 2016 regarding electronic synapses and neural networks). This piece announces new insight into how memristors function at the atomic scale,

In experiments at two Department of Energy national labs — SLAC National Accelerator Laboratory and Lawrence Berkeley National Laboratory — scientists at Hewlett Packard Enterprise (HPE) [also referred to as HP Labs or Hewlett Packard Laboratories] have experimentally confirmed critical aspects of how a new type of microelectronic device, the memristor, works at an atomic scale.

This result is an important step in designing these solid-state devices for use in future computer memories that operate much faster, last longer and use less energy than today’s flash memory. …

“We need information like this to be able to design memristors that will succeed commercially,” said Suhas Kumar, an HPE scientist and first author on the group’s technical paper.

A June 13, 2016 SLAC news release, which originated the news item, offers a brief history according to HPE and provides details about the latest work,

The memristor was proposed theoretically [by Dr. Leon Chua] in 1971 as the fourth basic electrical device element alongside the resistor, capacitor and inductor. At its heart is a tiny piece of a transition metal oxide sandwiched between two electrodes. Applying a positive or negative voltage pulse dramatically increases or decreases the memristor’s electrical resistance. This behavior makes it suitable for use as a “non-volatile” computer memory that, like flash memory, can retain its state without being refreshed with additional power.

Over the past decade, an HPE group led by senior fellow R. Stanley Williams has explored memristor designs, materials and behavior in detail. Since 2009 they have used intense synchrotron X-rays to reveal the movements of atoms in memristors during switching. Despite advances in understanding the nature of this switching, critical details that would be important in designing commercially successful circuits  remained controversial. For example, the forces that move the atoms, resulting in dramatic resistance changes during switching, remain under debate.

In recent years, the group examined memristors made with oxides of titanium, tantalum and vanadium. Initial experiments revealed that switching in the tantalum oxide devices could be controlled most easily, so it was chosen for further exploration at two DOE Office of Science User Facilities – SLAC’s Stanford Synchrotron Radiation Lightsource (SSRL) and Berkeley Lab’s Advanced Light Source (ALS).

At ALS, the HPE researchers mapped the positions of oxygen atoms before and after switching. For this, they used a scanning transmission X-ray microscope and an apparatus they built to precisely control the position of their sample and the timing and intensity of the 500-electronvolt ALS X-rays, which were tuned to see oxygen.

The experiments revealed that even weak voltage pulses create a thin conductive path through the memristor. During the pulse the path heats up, which creates a force that pushes oxygen atoms away from the path, making it even more conductive. Reversing the voltage pulse resets the memristor by sucking some of oxygen atoms back into the conducting path, thereby increasing the device’s resistance. The memristor’s resistance changes between 10-fold and 1 million-fold, depending on operating parameters like the voltage-pulse amplitude. This resistance change is dramatic enough to exploit commercially.

To be sure of their conclusion, the researchers also needed to understand if the tantalum atoms were moving along with the oxygen during switching. Imaging tantalum required higher-energy, 10,000-electronvolt X-rays, which they obtained at SSRL’s Beam Line 6-2. In a single session there, they determined that the tantalum remained stationary.

“That sealed the deal, convincing us that our hypothesis was correct,” said HPE scientist Catherine Graves, who had worked at SSRL as a Stanford graduate student. She added that discussions with SLAC experts were critical in guiding the HPE team toward the X-ray techniques that would allow them to see the tantalum accurately.

Kumar said the most promising aspect of the tantalum oxide results was that the scientists saw no degradation in switching over more than a billion voltage pulses of a magnitude suitable for commercial use. He added that this knowledge helped his group build memristors that lasted nearly a billion switching cycles, about a thousand-fold improvement.

“This is much longer endurance than is possible with today’s flash memory devices,” Kumar said. “In addition, we also used much higher voltage pulses to accelerate and observe memristor failures, which is also important in understanding how these devices work. Failures occurred when oxygen atoms were forced so far away that they did not return to their initial positions.”

Beyond memory chips, Kumar says memristors’ rapid switching speed and small size could make them suitable for use in logic circuits. Additional memristor characteristics may also be beneficial in the emerging class of brain-inspired neuromorphic computing circuits.

“Transistors are big and bulky compared to memristors,” he said. “Memristors are also much better suited for creating the neuron-like voltage spikes that characterize neuromorphic circuits.”

The researchers have provided an animation illustrating how memristors can fail,

This animation shows how millions of high-voltage switching cycles can cause memristors to fail. The high-voltage switching eventually creates regions that are permanently rich (blue pits) or deficient (red peaks) in oxygen and cannot be switched back. Switching at lower voltages that would be suitable for commercial devices did not show this performance degradation. These observations allowed the researchers to develop materials processing and operating conditions that improved the memristors’ endurance by nearly a thousand times. (Suhas Kumar) Courtesy: SLAC

This animation shows how millions of high-voltage switching cycles can cause memristors to fail. The high-voltage switching eventually creates regions that are permanently rich (blue pits) or deficient (red peaks) in oxygen and cannot be switched back. Switching at lower voltages that would be suitable for commercial devices did not show this performance degradation. These observations allowed the researchers to develop materials processing and operating conditions that improved the memristors’ endurance by nearly a thousand times. (Suhas Kumar) Courtesy: SLAC

Here’s a link to and a citation for the paper,

Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors by Suhas Kumar, Catherine E. Graves, John Paul Strachan, Emmanuelle Merced Grafals, Arthur L. David Kilcoyne3, Tolek Tyliszczak, Johanna Nelson Weker, Yoshio Nishi, and R. Stanley Williams. Advanced Materials, First published: 2 February 2016; Print: Volume 28, Issue 14 April 13, 2016 Pages 2772–2776 DOI: 10.1002/adma.201505435

This paper is behind a paywall.

Some of the ‘memristor story’ is contested and you can find a brief overview of the discussion in this Wikipedia memristor entry in the section on ‘definition and criticism’. There is also a history of the memristor which dates back to the 19th century featured in my May 22, 2012 posting.

Solar-powered sensors to power the Internet of Things?

Leave a reply

As a June 23, 2015 news item on Nanowerk notes, the ‘nternet of things’, will need lots and lots of power,

The latest buzz in the information technology industry regards “the Internet of things” — the idea that vehicles, appliances, civil-engineering structures, manufacturing equipment, and even livestock would have their own embedded sensors that report information directly to networked servers, aiding with maintenance and the coordination of tasks.

Realizing that vision, however, will require extremely low-power sensors that can run for months without battery changes — or, even better, that can extract energy from the environment to recharge.

Last week, at the Symposia on VLSI Technology and Circuits, MIT [Massachusetts Institute of Technology] researchers presented a new power converter chip that can harvest more than 80 percent of the energy trickling into it, even at the extremely low power levels characteristic of tiny solar cells. [emphasis mine] Previous experimental ultralow-power converters had efficiencies of only 40 or 50 percent.

A June 22, 2015 MIT news release (also on EurekAlert), which originated the news item, describes some additional capabilities,

Moreover, the researchers’ chip achieves those efficiency improvements while assuming additional responsibilities. Where its predecessors could use a solar cell to either charge a battery or directly power a device, this new chip can do both, and it can power the device directly from the battery.

All of those operations also share a single inductor — the chip’s main electrical component — which saves on circuit board space but increases the circuit complexity even further. Nonetheless, the chip’s power consumption remains low.

“We still want to have battery-charging capability, and we still want to provide a regulated output voltage,” says Dina Reda El-Damak, an MIT graduate student in electrical engineering and computer science and first author on the new paper. “We need to regulate the input to extract the maximum power, and we really want to do all these tasks with inductor sharing and see which operational mode is the best. And we want to do it without compromising the performance, at very limited input power levels — 10 nanowatts to 1 microwatt — for the Internet of things.”

The prototype chip was manufactured through the Taiwan Semiconductor Manufacturing Company’s University Shuttle Program.

The MIT news release goes on to describe chip specifics,

The circuit’s chief function is to regulate the voltages between the solar cell, the battery, and the device the cell is powering. If the battery operates for too long at a voltage that’s either too high or too low, for instance, its chemical reactants break down, and it loses the ability to hold a charge.

To control the current flow across their chip, El-Damak and her advisor, Anantha Chandrakasan, the Joseph F. and Nancy P. Keithley Professor in Electrical Engineering, use an inductor, which is a wire wound into a coil. When a current passes through an inductor, it generates a magnetic field, which in turn resists any change in the current.

Throwing switches in the inductor’s path causes it to alternately charge and discharge, so that the current flowing through it continuously ramps up and then drops back down to zero. Keeping a lid on the current improves the circuit’s efficiency, since the rate at which it dissipates energy as heat is proportional to the square of the current.

Once the current drops to zero, however, the switches in the inductor’s path need to be thrown immediately; otherwise, current could begin to flow through the circuit in the wrong direction, which would drastically diminish its efficiency. The complication is that the rate at which the current rises and falls depends on the voltage generated by the solar cell, which is highly variable. So the timing of the switch throws has to vary, too.

Electric hourglass

To control the switches’ timing, El-Damak and Chandrakasan use an electrical component called a capacitor, which can store electrical charge. The higher the current, the more rapidly the capacitor fills. When it’s full, the circuit stops charging the inductor.

The rate at which the current drops off, however, depends on the output voltage, whose regulation is the very purpose of the chip. Since that voltage is fixed, the variation in timing has to come from variation in capacitance. El-Damak and Chandrakasan thus equip their chip with a bank of capacitors of different sizes. As the current drops, it charges a subset of those capacitors, whose selection is determined by the solar cell’s voltage. Once again, when the capacitor fills, the switches in the inductor’s path are flipped.

“In this technology space, there’s usually a trend to lower efficiency as the power gets lower, because there’s a fixed amount of energy that’s consumed by doing the work,” says Brett Miwa, who leads a power conversion development project as a fellow at the chip manufacturer Maxim Integrated. “If you’re only coming in with a small amount, it’s hard to get most of it out, because you lose more as a percentage. [El-Damak’s] design is unusually efficient for how low a power level she’s at.”

“One of the things that’s most notable about it is that it’s really a fairly complete system,” he adds. “It’s really kind of a full system-on-a chip for power management. And that makes it a little more complicated, a little bit larger, and a little bit more comprehensive than some of the other designs that might be reported in the literature. So for her to still achieve these high-performance specs in a much more sophisticated system is also noteworthy.”

I wonder how close they are to commercializing this chip (see below),

The MIT researchers' prototype for a chip measuring 3 millimeters by 3 millimeters. The magnified detail shows the chip's main control circuitry, including the startup electronics; the controller that determines whether to charge the battery, power a device, or both; and the array of switches that control current flow to an external inductor coil. This active area measures just 2.2 millimeters by 1.1 millimeters. (click on image to enlarge) Read more: Toward tiny, solar-powered sensors. Courtesy: MIT

The MIT researchers’ prototype for a chip measuring 3 millimeters by 3 millimeters. The magnified detail shows the chip’s main control circuitry, including the startup electronics; the controller that determines whether to charge the battery, power a device, or both; and the array of switches that control current flow to an external inductor coil. This active area measures just 2.2 millimeters by 1.1 millimeters. (click on image to enlarge)
Courtesy: MIT