Tag Archives: Shunsuke Fukami

Memristive spintronic neurons

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A December 6, 2021 news item on Nanowerk on memristive spintronic neurons (Note: A link has been removed),

Researchers at Tohoku University and the University of Gothenburg have established a new spintronic technology for brain-inspired computing.

Their achievement was published in the journal Nature Materials (“Memristive control of mutual SHNO synchronization for neuromorphic computing”).

Sophisticated cognitive tasks, such as image and speech recognition, have seen recent breakthroughs thanks to deep learning. Even so, the human brain still executes these tasks without exerting much energy and with greater efficiency than any computer. The development of energy-efficient artificial neurons capable of emulating brain-inspired processes has therefore been a major research goal for decades.

…

A November 29, 2021 Tohoku University press release (also on EurekAlert but published November 30, 2021), which originated the news release, provides more technical detail,

Researchers demonstrated the first integration of a cognitive computing nano-element – the memristor – into another – a spintronic oscillator. Arrays of these memristor-controlled oscillators combine the non-volatile local storage of the memristor function with the microwave frequency computation of the nano-oscillator networks and can closely imitate the non-linear oscillatory neural networks of the human brain.

Resistance of the memristor changed with the voltage hysteresis applied to the top Ti/Cu electrode. Upon voltage application to the electrode, an electric field was applied at the high-resistance state, compared to electric current flows for the low-resistance state. The effects of electric field and current on the oscillator differed from each other, offering various controls of oscillation and synchronization properties.

Professor Johan Åkerman of the University of Gothenburg and leader of the study expressed his hopes for the future and the significance of the finding. “We are particularly interested in emerging quantum-inspired computing schemes, such as Ising Machines. The results also highlight the productive collaboration that we have established in neuromorphic spintronics between the University of Gothenburg and Tohoku University, something that is also part of the Sweden-Japan collaborative network MIRAI 2.0.”

“So far, artificial neurons and synapses have been developed separately in many fields; this work marks an important milestone: two functional elements have been combined into one,” said professor Shunsuke Fukami, who led the project on the Tohoku University side. Dr. Mohammad Zahedinejad of the University of Gothenburg and first author of the study adds, “Using the memristor-controlled spintronic oscillator arrays, we could tune the synaptic interactions between adjacent neurons and program them into mutually different and partially synchronized states.”

To put into practice their discovery, the researchers examined the operation of a test device comprising one oscillator and one memristor. The constricted region of W/CoFeB stack served as an oscillator, i.e., the neuron, whereas the MgO/AlOx/SiNx stack acted as a memristor, i.e., the synapse.

Resistance of the memristor changed with the voltage hysteresis applied to the top Ti/Cu electrode. Upon voltage application to the electrode, an electric field was applied at the high-resistance state, compared to electric current flows for the low-resistance state. The effects of electric field and current on the oscillator differed from each other, offering various controls of oscillation and synchronization properties.

Professor Johan Åkerman of the University of Gothenburg and leader of the study expressed his hopes for the future and the significance of the finding. “We are particularly interested in emerging quantum-inspired computing schemes, such as Ising Machines. The results also highlight the productive collaboration that we have established in neuromorphic spintronics between the University of Gothenburg and Tohoku University, something that is also part of the Sweden-Japan collaborative network MIRAI 2.0.” [sic]

Here’s a link to and a citation for the paper,

Memristive control of mutual spin Hall nano-oscillator synchronization for neuromorphic computing by Mohammad Zahedinejad, Himanshu Fulara, Roman Khymyn, Afshin Houshang, Mykola Dvornik, Shunsuke Fukami, Shun Kanai, Hideo Ohno & Johan Åkerman. Nature Materials (2021) DOI: https://doi.org/10.1038/s41563-021-01153-6 Published 29 November 2021

This paper is behind a paywall.

Brainlike computing with spintronic devices

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Adding to the body of ‘memristor’ research I have here, there’s an April 17, 2019 news item on Nanowerk announcing the development of ‘memristor’ hardware by Japanese researchers (Note: A link has been removed),

A research group from Tohoku University has developed spintronics devices which are promising for future energy-efficient and adoptive computing systems, as they behave like neurons and synapses in the human brain (Advanced Materials, “Artificial Neuron and Synapse Realized in an Antiferromagnet/Ferromagnet Heterostructure Using Dynamics of Spin–Orbit Torque Switching”).

Just because this ‘synapse’ is pretty,

Courtesy: Tohoku University

An April 16, 2019 Tohoku University press release, which originated the news item, expands on the theme,

Today’s information society is built on digital computers that have evolved drastically for half a century and are capable of executing complicated tasks reliably. The human brain, by contrast, operates under very limited power and is capable of executing complex tasks efficiently using an architecture that is vastly different from that of digital computers.

So the development of computing schemes or hardware inspired by the processing of information in the brain is of broad interest to scientists in fields ranging from physics, chemistry, material science and mathematics, to electronics and computer science.

In computing, there are various ways to implement the processing of information by a brain. Spiking neural network is a kind of implementation method which closely mimics the brain’s architecture and temporal information processing. Successful implementation of spiking neural network requires dedicated hardware with artificial neurons and synapses that are designed to exhibit the dynamics of biological neurons and synapses.

Here, the artificial neuron and synapse would ideally be made of the same material system and operated under the same working principle. However, this has been a challenging issue due to the fundamentally different nature of the neuron and synapse in biological neural networks.

The research group – which includes Professor Hideo Ohno (currently the university president), Associate Professor Shunsuke Fukami, Dr. Aleksandr Kurenkov and Professor Yoshihiko Horio – created an artificial neuron and synapse by using spintronics technology. Spintronics is an academic field that aims to simultaneously use an electron’s electric (charge) and magnetic (spin) properties.

The research group had previously developed a functional material system consisting of antiferromagnetic and ferromagnetic materials. This time, they prepared artificial neuronal and synaptic devices microfabricated from the material system, which demonstrated fundamental behavior of biological neuron and synapse – leaky integrate-and-fire and spike-timing-dependent plasticity, respectively – based on the same concept of spintronics.

The spiking neural network is known to be advantageous over today’s artificial intelligence for the processing and prediction of temporal information. Expansion of the developed technology to unit-circuit, block and system levels is expected to lead to computers that can process time-varying information such as voice and video with a small amount of power or edge devices that have the an ability to adopt users and the environment through usage.

Here’s a link to and a citation for the paper,

Artificial Neuron and Synapse Realized in an Antiferromagnet/Ferromagnet Heterostructure Using Dynamics of Spin–Orbit Torque Switching by Aleksandr Kurenkov, Samik DuttaGupta, Chaoliang Zhang, Shunsuke Fukami, Yoshihiko Horio, Hideo Ohno. Advanced Materials https://doi.org/10.1002/adma.201900636 First published: 16 April 2019

This paper is behind a paywall.

Spintronics-based artificial intelligence

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Courtesy: Tohoku University

Japanese researchers have managed to mimic a synapse (artificial neural network) with a spintronics-based device according to a Dec. 19, 2016 Tohoku University press release (also on EurekAlert but dated Dec. 20, 2016),

Researchers at Tohoku University have, for the first time, successfully demonstrated the basic operation of spintronics-based artificial intelligence.

Artificial intelligence, which emulates the information processing function of the brain that can quickly execute complex and complicated tasks such as image recognition and weather prediction, has attracted growing attention and has already been partly put to practical use.

The currently-used artificial intelligence works on the conventional framework of semiconductor-based integrated circuit technology. However, this lacks the compactness and low-power feature of the human brain. To overcome this challenge, the implementation of a single solid-state device that plays the role of a synapse is highly promising.

The Tohoku University research group of Professor Hideo Ohno, Professor Shigeo Sato, Professor Yoshihiko Horio, Associate Professor Shunsuke Fukami and Assistant Professor Hisanao Akima developed an artificial neural network in which their recently-developed spintronic devices, comprising micro-scale magnetic material, are employed (Fig. 1). The used spintronic device is capable of memorizing arbitral values between 0 and 1 in an analogue manner unlike the conventional magnetic devices, and thus perform the learning function, which is served by synapses in the brain.

Using the developed network (Fig. 2), the researchers examined an associative memory operation, which is not readily executed by conventional computers. Through the multiple trials, they confirmed that the spintronic devices have a learning ability with which the developed artificial neural network can successfully associate memorized patterns (Fig. 3) from their input noisy versions just like the human brain can.

The proof-of-concept demonstration in this research is expected to open new horizons in artificial intelligence technology – one which is of a compact size, and which simultaneously achieves fast-processing capabilities and ultralow-power consumption. These features should enable the artificial intelligence to be used in a broad range of societal applications such as image/voice recognition, wearable terminals, sensor networks and nursing-care robots.

Here are Fig. 1 and Fig. 2, as mentioned in the press release,

Fig. 1. (a) Optical photograph of a fabricated spintronic device that serves as artificial synapse in the present demonstration. Measurement circuit for the resistance switching is also shown. (b) Measured relation between the resistance of the device and applied current, showing analogue-like resistance variation. (c) Photograph of spintronic device array mounted on a ceramic package, which is used for the developed artificial neural network. Courtesy: Tohoku University

Fig. 2. Block diagram of developed artificial neural network, consisting of PC, FPGA, and array of spintronics (spin-orbit torque; SOT) devices. Courtesy: Tohoku University

Here`s a link to and a citation for the paper,

Analogue spin–orbit torque device for artificial-neural-network-based associative memory operation by William A. Borders, Hisanao Akima1, Shunsuke Fukami, Satoshi Moriya, Shouta Kurihara, Yoshihiko Horio, Shigeo Sato, and Hideo Ohno. Applied Physics Express, Volume 10, Number 1 https://doi.org/10.7567/APEX.10.013007. Published 20 December 2016

© 2017 The Japan Society of Applied Physics

This is an open access paper.

For anyone interested in my other posts on memristors, artificial brains, and artificial intelligence, you can search this blog for those terms  and/or Neuromorphic Engineering in the Categories section.