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New design directions to increase variety, efficiency, selectivity and reliability for memristive devices

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A May 11, 2020 news item on ScienceDaily provides a description of the current ‘memristor scene’ along with an announcement about a piece of recent research,

Scientists around the world are intensively working on memristive devices, which are capable in extremely low power operation and behave similarly to neurons in the brain. Researchers from the Jülich Aachen Research Alliance (JARA) and the German technology group Heraeus have now discovered how to systematically control the functional behaviour of these elements. The smallest differences in material composition are found crucial: differences so small that until now experts had failed to notice them. The researchers’ design directions could help to increase variety, efficiency, selectivity and reliability for memristive technology-based applications, for example for energy-efficient, non-volatile storage devices or neuro-inspired computers.

Memristors are considered a highly promising alternative to conventional nanoelectronic elements in computer Chips [sic]. Because of the advantageous functionalities, their development is being eagerly pursued by many companies and research institutions around the world. The Japanese corporation NEC installed already the first prototypes in space satellites back in 2017. Many other leading companies such as Hewlett Packard, Intel, IBM, and Samsung are working to bring innovative types of computer and storage devices based on memristive elements to market.

Fundamentally, memristors are simply “resistors with memory,” in which high resistance can be switched to low resistance and back again. This means in principle that the devices are adaptive, similar to a synapse in a biological nervous system. “Memristive elements are considered ideal candidates for neuro-inspired computers modelled on the brain, which are attracting a great deal of interest in connection with deep learning and artificial intelligence,” says Dr. Ilia Valov of the Peter Grünberg Institute (PGI-7) at Forschungszentrum Jülich.

In the latest issue of the open access journal Science Advances, he and his team describe how the switching and neuromorphic behaviour of memristive elements can be selectively controlled. According to their findings, the crucial factor is the purity of the switching oxide layer. “Depending on whether you use a material that is 99.999999 % pure, and whether you introduce one foreign atom into ten million atoms of pure material or into one hundred atoms, the properties of the memristive elements vary substantially” says Valov.

A May 11, 2020 Forschungszentrum Juelich press release (also on EurekAlert), which originated the news item, delves into the theme of increasing control over memristive systems,

This effect had so far been overlooked by experts. It can be used very specifically for designing memristive systems, in a similar way to doping semiconductors in information technology. “The introduction of foreign atoms allows us to control the solubility and transport properties of the thin oxide layers,” explains Dr. Christian Neumann of the technology group Heraeus. He has been contributing his materials expertise to the project ever since the initial idea was conceived in 2015.

“In recent years there has been remarkable progress in the development and use of memristive devices, however that progress has often been achieved on a purely empirical basis,” according to Valov. Using the insights that his team has gained, manufacturers could now methodically develop memristive elements selecting the functions they need. The higher the doping concentration, the slower the resistance of the elements changes as the number of incoming voltage pulses increases and decreases, and the more stable the resistance remains. “This means that we have found a way for designing types of artificial synapses with differing excitability,” explains Valov.

Design specification for artificial synapses

The brain’s ability to learn and retain information can largely be attributed to the fact that the connections between neurons are strengthened when they are frequently used. Memristive devices, of which there are different types such as electrochemical metallization cells (ECMs) or valence change memory cells (VCMs), behave similarly. When these components are used, the conductivity increases as the number of incoming voltage pulses increases. The changes can also be reversed by applying voltage pulses of the opposite polarity.

The JARA researchers conducted their systematic experiments on ECMs, which consist of a copper electrode, a platinum electrode, and a layer of silicon dioxide between them. Thanks to the cooperation with Heraeus researchers, the JARA scientists had access to different types of silicon dioxide: one with a purity of 99.999999 % – also called 8N silicon dioxide – and others containing 100 to 10,000 ppm (parts per million) of foreign atoms. The precisely doped glass used in their experiments was specially developed and manufactured by quartz glass specialist Heraeus Conamic, which also holds the patent for the procedure. Copper and protons acted as mobile doping agents, while aluminium and gallium were used as non-volatile doping.

Synapses, the connections between neurons, have the ability to transmit signals with varying degrees of strength when they are excited by a quick succession of electrical impulses. One effect of this repeated activity is to increase the concentration of calcium ions, with the result that more neurotransmitters are emitted. Depending on the activity, other effects cause long-term structural changes, which impact the strength of the transmission for several hours, or potentially even for the rest of the person’s life. Memristive elements allow the strength of the electrical transmission to be changed in a similar way to synaptic connections, by applying a voltage. In electrochemical metallization cells (ECMs), a metallic filament develops between the two metal electrodes, thus increasing conductivity. Applying voltage pulses with reversed polarity causes the filament to shrink again until the cell reaches its initial high resistance state. Copyright: Forschungszentrum Jülich / Tobias Schlößer

Record switching time confirms theory

Based on their series of experiments, the researchers were able to show that the ECMs’ switching times change as the amount of doping atoms changes. If the switching layer is made of 8N silicon dioxide, the memristive component switches in only 1.4 nanoseconds. To date, the fastest value ever measured for ECMs had been around 10 nanoseconds. By doping the oxide layer of the components with up to 10,000 ppm of foreign atoms, the switching time was prolonged into the range of milliseconds. “We can also theoretically explain our results. This is helping us to understand the physico-chemical processes on the nanoscale and apply this knowledge in the practice” says Valov. Based on generally applicable theoretical considerations, supported by experimental results, some also documented in the literature, he is convinced that the doping/impurity effect occurs and can be employed in all types memristive elements.

Top: In memristive elements (ECMs) with an undoped, high-purity switching layer of silicon oxide (SiO2), copper ions can move very fast. A filament of copper atoms forms correspondingly fast on the platinum electrode. This increases the total device conductivity respectively the capacity. Due to the high mobility of the ions, however, this filament is unstable at low forming voltages. Center: Gallium ions (Ga3+), which are introduced into the cell (non-volatile doping), bind copper ions (Cu2+) in the switching layer. The movement of the ions slows down, leading to lower switching times, but the filament, once formed remains longer stable. Bottom: Doping with aluminium ions (Al3+) slows down the process even more, since aluminium ions bind copper ions even stronger than gallium ions. Filament growth is even slower, while at the same time the stability of the filament is further increased. Depending on the chemical properties of the introduced doping elements, memristive cells – the artificial synapses – can be created with tailor-made switching and neuromorphic properties. Copyright: Forschungszentrum Jülich / Tobias Schloesser

Here’s a link to and a citation for the paper,

Design of defect-chemical properties and device performance in memristive systems by M. Lübben, F. Cüppers, J. Mohr, M. von Witzleben, U. Breuer, R. Waser, C. Neumann, and I. Valov. Science Advances 08 May 2020: Vol. 6, no. 19, eaaz9079 DOI: 10.1126/sciadv.aaz9079

This paper is open access.

For anyone curious about the German technology group, Heraeus, there’s a fascinating history in its Wikipedia entry. The technology company was formally founded in 1851 but it can be traced back to the 17th century and the founding family’s apothecary.

Memristors with better mimicry of synapses

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It seems to me it’s been quite a while since I’ve stumbled across a memristor story from the University of Micihigan but it was worth waiting for. (Much of the research around memristors has to do with their potential application in neuromorphic (brainlike) computers.) From a December 17, 2018 news item on ScienceDaily,

A new electronic device developed at the University of Michigan can directly model the behaviors of a synapse, which is a connection between two neurons.

For the first time, the way that neurons share or compete for resources can be explored in hardware without the need for complicated circuits.

“Neuroscientists have argued that competition and cooperation behaviors among synapses are very important. Our new memristive devices allow us to implement a faithful model of these behaviors in a solid-state system,” said Wei Lu, U-M professor of electrical and computer engineering and senior author of the study in Nature Materials.

A December 17, 2018 University of Michigan news release (also on EurekAlert), which originated the news item, provides an explanation of memristors and their ‘similarity’ to synapses while providing more details about this latest research,

Memristors are electrical resistors with memory–advanced electronic devices that regulate current based on the history of the voltages applied to them. They can store and process data simultaneously, which makes them a lot more efficient than traditional systems. They could enable new platforms that process a vast number of signals in parallel and are capable of advanced machine learning.

The memristor is a good model for a synapse. It mimics the way that the connections between neurons strengthen or weaken when signals pass through them. But the changes in conductance typically come from changes in the shape of the channels of conductive material within the memristor. These channels–and the memristor’s ability to conduct electricity–could not be precisely controlled in previous devices.

Now, the U-M team has made a memristor in which they have better command of the conducting pathways.They developed a new material out of the semiconductor molybdenum disulfide–a “two-dimensional” material that can be peeled into layers just a few atoms thick. Lu’s team injected lithium ions into the gaps between molybdenum disulfide layers.
They found that if there are enough lithium ions present, the molybdenum sulfide transforms its lattice structure, enabling electrons to run through the film easily as if it were a metal. But in areas with too few lithium ions, the molybdenum sulfide restores its original lattice structure and becomes a semiconductor, and electrical signals have a hard time getting through.

The lithium ions are easy to rearrange within the layer by sliding them with an electric field. This changes the size of the regions that conduct electricity little by little and thereby controls the device’s conductance.

“Because we change the ‘bulk’ properties of the film, the conductance change is much more gradual and much more controllable,” Lu said.

In addition to making the devices behave better, the layered structure enabled Lu’s team to link multiple memristors together through shared lithium ions–creating a kind of connection that is also found in brains. A single neuron’s dendrite, or its signal-receiving end, may have several synapses connecting it to the signaling arms of other neurons. Lu compares the availability of lithium ions to that of a protein that enables synapses to grow.

If the growth of one synapse releases these proteins, called plasticity-related proteins, other synapses nearby can also grow–this is cooperation. Neuroscientists have argued that cooperation between synapses helps to rapidly form vivid memories that last for decades and create associative memories, like a scent that reminds you of your grandmother’s house, for example. If the protein is scarce, one synapse will grow at the expense of the other–and this competition pares down our brains’ connections and keeps them from exploding with signals.
Lu’s team was able to show these phenomena directly using their memristor devices. In the competition scenario, lithium ions were drained away from one side of the device. The side with the lithium ions increased its conductance, emulating the growth, and the conductance of the device with little lithium was stunted.

In a cooperation scenario, they made a memristor network with four devices that can exchange lithium ions, and then siphoned some lithium ions from one device out to the others. In this case, not only could the lithium donor increase its conductance–the other three devices could too, although their signals weren’t as strong.

Lu’s team is currently building networks of memristors like these to explore their potential for neuromorphic computing, which mimics the circuitry of the brain.

Here’s a link to and a citation for the paper,

Ionic modulation and ionic coupling effects in MoS2 devices for neuromorphic computing by Xiaojian Zhu, Da Li, Xiaogan Liang, & Wei D. Lu. Nature Materials (2018) DOI: https://doi.org/10.1038/s41563-018-0248-5 Published 17 December 2018

This paper is behind a paywall.

The researchers have made images illustrating their work available,

A schematic of the molybdenum disulfide layers with lithium ions between them. On the right, the simplified inset shows how the molybdenum disulfide changes its atom arrangements in the presence and absence of the lithium atoms, between a metal (1T’ phase) and semiconductor (2H phase), respectively. Image credit: Xiaojian Zhu, Nanoelectronics Group, University of Michigan.

A diagram of a synapse receiving a signal from one of the connecting neurons. This signal activates the generation of plasticity-related proteins (PRPs), which help a synapse to grow. They can migrate to other synapses, which enables multiple synapses to grow at once. The new device is the first to mimic this process directly, without the need for software or complicated circuits. Image credit: Xiaojian Zhu, Nanoelectronics Group, University of Michigan.
An electron microscope image showing the rectangular gold (Au) electrodes representing signalling neurons and the rounded electrode representing the receiving neuron. The material of molybdenum disulfide layered with lithium connects the electrodes, enabling the simulation of cooperative growth among synapses. Image credit: Xiaojian Zhu, Nanoelectronics Group, University of Michigan.

That’s all folks.