Tag Archives: John T. Heron

How memristors retain information without a power source? A mystery solved

Leave a reply

A September 10, 2024 news item on ScienceDaily provides a technical explanation of how memristors, without a power source, can retain information,

Phase separation, when molecules part like oil and water, works alongside oxygen diffusion to help memristors — electrical components that store information using electrical resistance — retain information even after the power is shut off, according to a University of Michigan led study recently published in Matter.

…

A September 11, 2024 University of Michigan press release (also on EurekAltert but published September 10, 2024), which originated the news item, delves further into the research,

Up to this point, explanations have not fully grasped how memristors retain information without a power source, known as nonvolatile memory, because models and experiments do not match up.

“While experiments have shown devices can retain information for over 10 years, the models used in the community show that information can only be retained for a few hours,” said Jingxian Li, U-M doctoral graduate of materials science and engineering and first author of the study.

To better understand the underlying phenomenon driving nonvolatile memristor memory, the researchers focused on a device known as resistive random access memory or RRAM, an alternative to the volatile RAM used in classical computing, and are particularly promising for energy-efficient artificial intelligence applications. 

The specific RRAM studied, a filament-type valence change memory (VCM), sandwiches an insulating tantalum oxide layer between two platinum electrodes. When a certain voltage is applied to the platinum electrodes, a conductive filament forms a tantalum ion bridge passing through the insulator to the electrodes, which allows electricity to flow, putting the cell in a low resistance state representing a “1” in binary code. If a different voltage is applied, the filament is dissolved as returning oxygen atoms react with the tantalum ions, “rusting” the conductive bridge and returning to a high resistance state, representing a binary code of “0”. 

It was once thought that RRAM retains information over time because oxygen is too slow to diffuse back. However, a series of experiments revealed that previous models have neglected the role of phase separation. 

“In these devices, oxygen ions prefer to be away from the filament and will never diffuse back, even after an indefinite period of time. This process is analogous to how a mixture of water and oil will not mix, no matter how much time we wait, because they have lower energy in a de-mixed state,” said Yiyang Li, U-M assistant professor of materials science and engineering and senior author of the study.

To test retention time, the researchers sped up experiments by increasing the temperature. One hour at 250°C is equivalent to about 100 years at 85°C—the typical temperature of a computer chip.

Using the extremely high-resolution imaging of atomic force microscopy, the researchers imaged filaments, which measure only about five nanometers or 20 atoms wide, forming within the one micron wide RRAM device.  

“We were surprised that we could find the filament in the device. It’s like finding a needle in a haystack,” Li said. 

The research team found that different sized filaments yielded different retention behavior. Filaments smaller than about 5 nanometers dissolved over time, whereas filaments larger than 5 nanometers strengthened over time. The size-based difference cannot be explained by diffusion alone.

Together, experimental results and models incorporating thermodynamic principles showed the formation and stability of conductive filaments depend on phase separation. 

The research team leveraged phase separation to extend memory retention from one day to well over 10 years in a rad-hard memory chip—a memory device built to withstand radiation exposure for use in space exploration. 

Other applications include in-memory computing for more energy efficient AI applications or memory devices for electronic skin—a stretchable electronic interface designed to mimic the sensory capabilities of human skin. Also known as e-skin, this material could be used to provide sensory feedback to prosthetic limbs, create new wearable fitness trackers or help robots develop tactile sensing for delicate tasks.

“We hope that our findings can inspire new ways to use phase separation to create information storage devices,” Li said.

Researchers at Ford Research, Dearborn; Oak Ridge National Laboratory; University at Albany; NY CREATES; Sandia National Laboratories; and Arizona State University, Tempe contributed to this study.

…

Here’s a link to and a citation for the paper,

Thermodynamic origin of nonvolatility in resistive memory by Jingxian Li, Anirudh Appachar, Sabrina L. Peczonczyk, Elisa T. Harrison, Anton V. Ievlev, Ryan Hood, Dongjae Shin, Sangmin Yoo, Brianna Roest, Kai Sun, Karsten Beckmann, Olya Popova, Tony Chiang, William S. Wahby, Robin B. Jacobs-Godrim, Matthew J. Marinella, Petro Maksymovych, John T. Heron, Nathaniel Cady, Wei D. Lu, Suhas Kumar, A. Alec Talin, Wenhao Sun, Yiyang Li. Matter DOI: https://doi.org/10.1016/j.matt.2024.07.018 Published online: August 26, 2024

This paper is behind a paywall.

Creating multiferroic material at room temperature

Leave a reply

A Sept. 23, 2016 news item on ScienceDaily describes some research from Cornell University (US),

Multiferroics — materials that exhibit both magnetic and electric order — are of interest for next-generation computing but difficult to create because the conditions conducive to each of those states are usually mutually exclusive. And in most multiferroics found to date, their respective properties emerge only at extremely low temperatures.

Two years ago, researchers in the labs of Darrell Schlom, the Herbert Fisk Johnson Professor of Industrial Chemistry in the Department of Materials Science and Engineering, and Dan Ralph, the F.R. Newman Professor in the College of Arts and Sciences, in collaboration with professor Ramamoorthy Ramesh at UC Berkeley, published a paper announcing a breakthrough in multiferroics involving the only known material in which magnetism can be controlled by applying an electric field at room temperature: the multiferroic bismuth ferrite.

Schlom’s group has partnered with David Muller and Craig Fennie, professors of applied and engineering physics, to take that research a step further: The researchers have combined two non-multiferroic materials, using the best attributes of both to create a new room-temperature multiferroic.

Their paper, “Atomically engineered ferroic layers yield a room-temperature magnetoelectric multiferroic,” was published — along with a companion News & Views piece — Sept. 22 [2016] in Nature. …

A Sept. 22, 2016 Cornell University news release by Tom Fleischman, which originated the news item, details more about the work (Note: A link has been removed),

The group engineered thin films of hexagonal lutetium iron oxide (LuFeO3), a material known to be a robust ferroelectric but not strongly magnetic. The LuFeO3 consists of alternating single monolayers of lutetium oxide and iron oxide, and differs from a strong ferrimagnetic oxide (LuFe2O4), which consists of alternating monolayers of lutetium oxide with double monolayers of iron oxide.

The researchers found, however, that they could combine these two materials at the atomic-scale to create a new compound that was not only multiferroic but had better properties that either of the individual constituents. In particular, they found they need to add just one extra monolayer of iron oxide to every 10 atomic repeats of the LuFeO3 to dramatically change the properties of the system.

That precision engineering was done via molecular-beam epitaxy (MBE), a specialty of the Schlom lab. A technique Schlom likens to “atomic spray painting,” MBE let the researchers design and assemble the two different materials in layers, a single atom at a time.

The combination of the two materials produced a strongly ferrimagnetic layer near room temperature. They then tested the new material at the Lawrence Berkeley National Laboratory (LBNL) Advanced Light Source in collaboration with co-author Ramesh to show that the ferrimagnetic atoms followed the alignment of their ferroelectric neighbors when switched by an electric field.

“It was when our collaborators at LBNL demonstrated electrical control of magnetism in the material that we made that things got super exciting,” Schlom said. “Room-temperature multiferroics are exceedingly rare and only multiferroics that enable electrical control of magnetism are relevant to applications.”

In electronics devices, the advantages of multiferroics include their reversible polarization in response to low-power electric fields – as opposed to heat-generating and power-sapping electrical currents – and their ability to hold their polarized state without the need for continuous power. High-performance memory chips make use of ferroelectric or ferromagnetic materials.

“Our work shows that an entirely different mechanism is active in this new material,” Schlom said, “giving us hope for even better – higher-temperature and stronger – multiferroics for the future.”

Collaborators hailed from the University of Illinois at Urbana-Champaign, the National Institute of Standards and Technology, the University of Michigan and Penn State University.

Here is a link and a citation to the paper and to a companion piece,

Atomically engineered ferroic layers yield a room-temperature magnetoelectric multiferroic by Julia A. Mundy, Charles M. Brooks, Megan E. Holtz, Jarrett A. Moyer, Hena Das, Alejandro F. Rébola, John T. Heron, James D. Clarkson, Steven M. Disseler, Zhiqi Liu, Alan Farhan, Rainer Held, Robert Hovden, Elliot Padgett, Qingyun Mao, Hanjong Paik, Rajiv Misra, Lena F. Kourkoutis, Elke Arenholz, Andreas Scholl, Julie A. Borchers, William D. Ratcliff, Ramamoorthy Ramesh, Craig J. Fennie, Peter Schiffer et al. Nature 537, 523–527 (22 September 2016) doi:10.1038/nature19343 Published online 21 September 2016

Condensed-matter physics: Multitasking materials from atomic templates by Manfred Fiebig. Nature 537, 499–500  (22 September 2016) doi:10.1038/537499a Published online 21 September 2016

Both the paper and its companion piece are behind a paywall.