This is highly technical and it’s here since I’m informally collecting all the research that I stumble across concerning memristors and neuromorphic engineering.

From a Sept. 5, 2022 news item on Nanowerk, Note: A link has been removed,

The silicon-based CMOS [complementary metal-oxide-semiconductor] technology is fast approaching its physical limits, and the electronics industry is urgently calling for new techniques to keep the long-term development. Two-dimensional (2D) semiconductors, like transition-metal dichalcogenides (TMDs), have become a competitive alternative to traditional semiconducting materials in the post-Moore era, and caused worldwide interest. However, before they can be used in practical applications, some key obstacles must be resolved. One of them is the large electrical contact resistances at the metal-semiconductor interfaces.

The large contact resistances mainly come from two aspects: the high tunneling barrier caused by the wide van der Waals (vdW) gap between the 2D material and the metal electrode; the high Schottky barrier accompanied by strong Fermi level pinning at the metal-semiconductor interface.

Four strategies including edge contact, doping TMDs, phase engineering, and using special metals, have been developed to address this problem. However, they all have shortcomings.

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In a new work (Nano Letters, “Van der Waals Epitaxy and Photoresponse of Hexagonal Tellurium Nanoplates on Flexible Mica Sheets”) coming out of Zhenxing Wang’s group at the National Center for Nanoscience and Technology [located in Beijing, China], the researchers have proposed a brand-new contact resistance lowering strategy of 2D semiconductors with a good feasibility, a wide generality and a high stability.

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You can fill in the blanks at Nanowerk or there’s this link and citation for the paper

Van der Waals Epitaxy and Photoresponse of Hexagonal Tellurium Nanoplates on Flexible Mica Sheets by Qisheng Wang, Muhammad Safdar, Kai Xu, Misbah Mirza, Zhenxing Wang, and Jun He. ACS Nano 2014, 8, 7, 7497–7505 DOI: https://doi.org/10.1021/nn5028104 Publication Date:July 2, 2014 Copyright © 2014 American Chemical Society

This paper is behind a paywall.