Tag Archives: neuromorphic computing

Bad battery, good synapse from Stanford University

A May 4, 2019 news item on ScienceDaily announces the latest advance made by Stanford University and Sandia National Laboratories in the field of neuromorphic (brainlike) computing,

The brain’s capacity for simultaneously learning and memorizing large amounts of information while requiring little energy has inspired an entire field to pursue brain-like — or neuromorphic — computers. Researchers at Stanford University and Sandia National Laboratories previously developed one portion of such a computer: a device that acts as an artificial synapse, mimicking the way neurons communicate in the brain.

In a paper published online by the journal Science on April 25 [2019], the team reports that a prototype array of nine of these devices performed even better than expected in processing speed, energy efficiency, reproducibility and durability.

Looking forward, the team members want to combine their artificial synapse with traditional electronics, which they hope could be a step toward supporting artificially intelligent learning on small devices.

“If you have a memory system that can learn with the energy efficiency and speed that we’ve presented, then you can put that in a smartphone or laptop,” said Scott Keene, co-author of the paper and a graduate student in the lab of Alberto Salleo, professor of materials science and engineering at Stanford who is co-senior author. “That would open up access to the ability to train our own networks and solve problems locally on our own devices without relying on data transfer to do so.”

An April 25, 2019 Stanford University news release (also on EurekAlert but published May 3, 2019) by Taylor Kubota, which originated the news item, expands on the theme,

A bad battery, a good synapse

The team’s artificial synapse is similar to a battery, modified so that the researchers can dial up or down the flow of electricity between the two terminals. That flow of electricity emulates how learning is wired in the brain. This is an especially efficient design because data processing and memory storage happen in one action, rather than a more traditional computer system where the data is processed first and then later moved to storage.

Seeing how these devices perform in an array is a crucial step because it allows the researchers to program several artificial synapses simultaneously. This is far less time consuming than having to program each synapse one-by-one and is comparable to how the brain actually works.

In previous tests of an earlier version of this device, the researchers found their processing and memory action requires about one-tenth as much energy as a state-of-the-art computing system needs in order to carry out specific tasks. Still, the researchers worried that the sum of all these devices working together in larger arrays could risk drawing too much power. So, they retooled each device to conduct less electrical current – making them much worse batteries but making the array even more energy efficient.

The 3-by-3 array relied on a second type of device – developed by Joshua Yang at the University of Massachusetts, Amherst, who is co-author of the paper – that acts as a switch for programming synapses within the array.

“Wiring everything up took a lot of troubleshooting and a lot of wires. We had to ensure all of the array components were working in concert,” said Armantas Melianas, a postdoctoral scholar in the Salleo lab. “But when we saw everything light up, it was like a Christmas tree. That was the most exciting moment.”

During testing, the array outperformed the researchers’ expectations. It performed with such speed that the team predicts the next version of these devices will need to be tested with special high-speed electronics. After measuring high energy efficiency in the 3-by-3 array, the researchers ran computer simulations of a larger 1024-by-1024 synapse array and estimated that it could be powered by the same batteries currently used in smartphones or small drones. The researchers were also able to switch the devices over a billion times – another testament to its speed – without seeing any degradation in its behavior.

“It turns out that polymer devices, if you treat them well, can be as resilient as traditional counterparts made of silicon. That was maybe the most surprising aspect from my point of view,” Salleo said. “For me, it changes how I think about these polymer devices in terms of reliability and how we might be able to use them.”

Room for creativity

The researchers haven’t yet submitted their array to tests that determine how well it learns but that is something they plan to study. The team also wants to see how their device weathers different conditions – such as high temperatures – and to work on integrating it with electronics. There are also many fundamental questions left to answer that could help the researchers understand exactly why their device performs so well.

“We hope that more people will start working on this type of device because there are not many groups focusing on this particular architecture, but we think it’s very promising,” Melianas said. “There’s still a lot of room for improvement and creativity. We only barely touched the surface.”

Here’s a link to and a citation for the paper,

Parallel programming of an ionic floating-gate memory array for scalable neuromorphic computing by Elliot J. Fuller, Scott T. Keene, Armantas Melianas, Zhongrui Wang, Sapan Agarwal, Yiyang Li, Yaakov Tuchman, Conrad D. James, Matthew J. Marinella, J. Joshua Yang3, Alberto Salleo, A. Alec Talin1. Science 25 Apr 2019: eaaw5581 DOI: 10.1126/science.aaw5581

This paper is behind a paywall.

For anyone interested in more about brainlike/brain-like/neuromorphic computing/neuromorphic engineering/memristors, use any or all of those terms in this blog’s search engine.

Brainlike computing with spintronic devices

Adding to the body of ‘memristor’ research I have here, there’s an April 17, 2019 news item on Nanowerk announcing the development of ‘memristor’ hardware by Japanese researchers (Note: A link has been removed),

A research group from Tohoku University has developed spintronics devices which are promising for future energy-efficient and adoptive computing systems, as they behave like neurons and synapses in the human brain (Advanced Materials, “Artificial Neuron and Synapse Realized in an Antiferromagnet/Ferromagnet Heterostructure Using Dynamics of Spin–Orbit Torque Switching”).

Just because this ‘synapse’ is pretty,

Courtesy: Tohoku University

An April 16, 2019 Tohoku University press release, which originated the news item, expands on the theme,

Today’s information society is built on digital computers that have evolved drastically for half a century and are capable of executing complicated tasks reliably. The human brain, by contrast, operates under very limited power and is capable of executing complex tasks efficiently using an architecture that is vastly different from that of digital computers.

So the development of computing schemes or hardware inspired by the processing of information in the brain is of broad interest to scientists in fields ranging from physics, chemistry, material science and mathematics, to electronics and computer science.

In computing, there are various ways to implement the processing of information by a brain. Spiking neural network is a kind of implementation method which closely mimics the brain’s architecture and temporal information processing. Successful implementation of spiking neural network requires dedicated hardware with artificial neurons and synapses that are designed to exhibit the dynamics of biological neurons and synapses.

Here, the artificial neuron and synapse would ideally be made of the same material system and operated under the same working principle. However, this has been a challenging issue due to the fundamentally different nature of the neuron and synapse in biological neural networks.

The research group – which includes Professor Hideo Ohno (currently the university president), Associate Professor Shunsuke Fukami, Dr. Aleksandr Kurenkov and Professor Yoshihiko Horio – created an artificial neuron and synapse by using spintronics technology. Spintronics is an academic field that aims to simultaneously use an electron’s electric (charge) and magnetic (spin) properties.

The research group had previously developed a functional material system consisting of antiferromagnetic and ferromagnetic materials. This time, they prepared artificial neuronal and synaptic devices microfabricated from the material system, which demonstrated fundamental behavior of biological neuron and synapse – leaky integrate-and-fire and spike-timing-dependent plasticity, respectively – based on the same concept of spintronics.

The spiking neural network is known to be advantageous over today’s artificial intelligence for the processing and prediction of temporal information. Expansion of the developed technology to unit-circuit, block and system levels is expected to lead to computers that can process time-varying information such as voice and video with a small amount of power or edge devices that have the an ability to adopt users and the environment through usage.

Here’s a link to and a citation for the paper,

Artificial Neuron and Synapse Realized in an Antiferromagnet/Ferromagnet Heterostructure Using Dynamics of Spin–Orbit Torque Switching by Aleksandr Kurenkov, Samik DuttaGupta, Chaoliang Zhang, Shunsuke Fukami, Yoshihiko Horio, Hideo Ohno. Advanced Materials https://doi.org/10.1002/adma.201900636 First published: 16 April 2019

This paper is behind a paywall.

Mimicking the brain with an evolvable organic electrochemical transistor

Simone Fabiano and Jennifer Gerasimov have developed a learning transistor that mimics the way synapses function. Credit: Thor Balkhed

At a guess, this was originally a photograph which has been passed through some sort of programme to give it a paintinglike quality.

Moving onto the research, I don’t see any reference to memristors (another of the ‘devices’ that mimics the human brain) so perhaps this is an entirely different way to mimic human brains? A February 5, 2019 news item on ScienceDaily announces the work from Linkoping University (Sweden),

A new transistor based on organic materials has been developed by scientists at Linköping University. It has the ability to learn, and is equipped with both short-term and long-term memory. The work is a major step on the way to creating technology that mimics the human brain.

A February 5, 2019 Linkoping University press release (also on EurekAlert), which originated the news item, describes this ‘nonmemristor’ research into brainlike computing in more detail,

Until now, brains have been unique in being able to create connections where there were none before. In a scientific article in Advanced Science, researchers from Linköping University describe a transistor that can create a new connection between an input and an output. They have incorporated the transistor into an electronic circuit that learns how to link a certain stimulus with an output signal, in the same way that a dog learns that the sound of a food bowl being prepared means that dinner is on the way.

A normal transistor acts as a valve that amplifies or dampens the output signal, depending on the characteristics of the input signal. In the organic electrochemical transistor that the researchers have developed, the channel in the transistor consists of an electropolymerised conducting polymer. The channel can be formed, grown or shrunk, or completely eliminated during operation. It can also be trained to react to a certain stimulus, a certain input signal, such that the transistor channel becomes more conductive and the output signal larger.

“It is the first time that real time formation of new electronic components is shown in neuromorphic devices”, says Simone Fabiano, principal investigator in organic nanoelectronics at the Laboratory of Organic Electronics, Campus Norrköping.

The channel is grown by increasing the degree of polymerisation of the material in the transistor channel, thereby increasing the number of polymer chains that conduct the signal. Alternatively, the material may be overoxidised (by applying a high voltage) and the channel becomes inactive. Temporary changes of the conductivity can also be achieved by doping or dedoping the material.

“We have shown that we can induce both short-term and permanent changes to how the transistor processes information, which is vital if one wants to mimic the ways that brain cells communicate with each other”, says Jennifer Gerasimov, postdoc in organic nanoelectronics and one of the authors of the article.

By changing the input signal, the strength of the transistor response can be modulated across a wide range, and connections can be created where none previously existed. This gives the transistor a behaviour that is comparable with that of the synapse, or the communication interface between two brain cells.

It is also a major step towards machine learning using organic electronics. Software-based artificial neural networks are currently used in machine learning to achieve what is known as “deep learning”. Software requires that the signals are transmitted between a huge number of nodes to simulate a single synapse, which takes considerable computing power and thus consumes considerable energy.

“We have developed hardware that does the same thing, using a single electronic component”, says Jennifer Gerasimov.

“Our organic electrochemical transistor can therefore carry out the work of thousands of normal transistors with an energy consumption that approaches the energy consumed when a human brain transmits signals between two cells”, confirms Simone Fabiano.

The transistor channel has not been constructed using the most common polymer used in organic electronics, PEDOT, but instead using a polymer of a newly-developed monomer, ETE-S, produced by Roger Gabrielsson, who also works at the Laboratory of Organic Electronics and is one of the authors of the article. ETE-S has several unique properties that make it perfectly suited for this application – it forms sufficiently long polymer chains, is water-soluble while the polymer form is not, and it produces polymers with an intermediate level of doping. The polymer PETE-S is produced in its doped form with an intrinsic negative charge to balance the positive charge carriers (it is p-doped).

Here’s a link to and a citation for the paper,

An Evolvable Organic Electrochemical Transistor for Neuromorphic Applications by Jennifer Y. Gerasimov, Roger Gabrielsson, Robert Forchheimer, Eleni Stavrinidou, Daniel T. Simon, Magnus Berggren, Simone Fabiano. Advanced Science DOI: https://doi.org/10.1002/advs.201801339 First published: 04 February 2019

This paper is open access.

There’s one other image associated this work that I want to include here,

Synaptic transistor. Sketch of the organic electrochemical transistor, formed by electropolymerization of ETE‐S in the transistor channel. The electrolyte solution is confined by a PDMS well (not shown). In this work, we define the input at the gate as the presynaptic signal and the response at the drain as the postsynaptic terminal. During operation, the drain voltage is kept constant while the gate is pulsed. Synaptic weight is defined as the amplitude of the current response to a standard gate voltage characterization pulse of −0.1 V. Different memory functionalities are accessible by applying gate voltage Courtesy: Linkoping University Researchers

Human Brain Project: update

The European Union’s Human Brain Project was announced in January 2013. It, along with the Graphene Flagship, had won a multi-year competition for the extraordinary sum of one million euros each to be paid out over a 10-year period. (My January 28, 2013 posting gives the details available at the time.)

At a little more than half-way through the project period, Ed Yong, in his July 22, 2019 article for The Atlantic, offers an update (of sorts),

Ten years ago, a neuroscientist said that within a decade he could simulate a human brain. Spoiler: It didn’t happen.

On July 22, 2009, the neuroscientist Henry Markram walked onstage at the TEDGlobal conference in Oxford, England, and told the audience that he was going to simulate the human brain, in all its staggering complexity, in a computer. His goals were lofty: “It’s perhaps to understand perception, to understand reality, and perhaps to even also understand physical reality.” His timeline was ambitious: “We can do it within 10 years, and if we do succeed, we will send to TED, in 10 years, a hologram to talk to you.” …

It’s been exactly 10 years. He did not succeed.

One could argue that the nature of pioneers is to reach far and talk big, and that it’s churlish to single out any one failed prediction when science is so full of them. (Science writers joke that breakthrough medicines and technologies always seem five to 10 years away, on a rolling window.) But Markram’s claims are worth revisiting for two reasons. First, the stakes were huge: In 2013, the European Commission awarded his initiative—the Human Brain Project (HBP)—a staggering 1 billion euro grant (worth about $1.42 billion at the time). Second, the HBP’s efforts, and the intense backlash to them, exposed important divides in how neuroscientists think about the brain and how it should be studied.

Markram’s goal wasn’t to create a simplified version of the brain, but a gloriously complex facsimile, down to the constituent neurons, the electrical activity coursing along them, and even the genes turning on and off within them. From the outset, the criticism to this approach was very widespread, and to many other neuroscientists, its bottom-up strategy seemed implausible to the point of absurdity. The brain’s intricacies—how neurons connect and cooperate, how memories form, how decisions are made—are more unknown than known, and couldn’t possibly be deciphered in enough detail within a mere decade. It is hard enough to map and model the 302 neurons of the roundworm C. elegans, let alone the 86 billion neurons within our skulls. “People thought it was unrealistic and not even reasonable as a goal,” says the neuroscientist Grace Lindsay, who is writing a book about modeling the brain.
And what was the point? The HBP wasn’t trying to address any particular research question, or test a specific hypothesis about how the brain works. The simulation seemed like an end in itself—an overengineered answer to a nonexistent question, a tool in search of a use. …

Markram seems undeterred. In a recent paper, he and his colleague Xue Fan firmly situated brain simulations within not just neuroscience as a field, but the entire arc of Western philosophy and human civilization. And in an email statement, he told me, “Political resistance (non-scientific) to the project has indeed slowed us down considerably, but it has by no means stopped us nor will it.” He noted the 140 people still working on the Blue Brain Project, a recent set of positive reviews from five external reviewers, and its “exponentially increasing” ability to “build biologically accurate models of larger and larger brain regions.”

No time frame, this time, but there’s no shortage of other people ready to make extravagant claims about the future of neuroscience. In 2014, I attended TED’s main Vancouver conference and watched the opening talk, from the MIT Media Lab founder Nicholas Negroponte. In his closing words, he claimed that in 30 years, “we are going to ingest information. …

I’m happy to see the update. As I recall, there was murmuring almost immediately about the Human Brain Project (HBP). I never got details but it seemed that people were quite actively unhappy about the disbursements. Of course, this kind of uproar is not unusual when great sums of money are involved and the Graphene Flagship also had its rocky moments.

As for Yong’s contribution, I’m glad he’s debunking some of the hype and glory associated with the current drive to colonize the human brain and other efforts (e.g. genetics) which they often claim are the ‘future of medicine’.

To be fair. Yong is focused on the brain simulation aspect of the HBP (and Markram’s efforts in the Blue Brain Project) but there are other HBP efforts, as well, even if brain simulation seems to be the HBP’s main interest.

After reading the article, I looked up Henry Markram’s Wikipedia entry and found this,

In 2013, the European Union funded the Human Brain Project, led by Markram, to the tune of $1.3 billion. Markram claimed that the project would create a simulation of the entire human brain on a supercomputer within a decade, revolutionising the treatment of Alzheimer’s disease and other brain disorders. Less than two years into it, the project was recognised to be mismanaged and its claims overblown, and Markram was asked to step down.[7][8]

On 8 October 2015, the Blue Brain Project published the first digital reconstruction and simulation of the micro-circuitry of a neonatal rat somatosensory cortex.[9]

I also looked up the Human Brain Project and, talking about their other efforts, was reminded that they have a neuromorphic computing platform, SpiNNaker (mentioned here in a January 24, 2019 posting; scroll down about 50% of the way). For anyone unfamiliar with the term, neuromorphic computing/engineering is what scientists call the effort to replicate the human brain’s ability to synthesize and process information in computing processors.

In fact, there was some discussion in 2013 that the Human Brain Project and the Graphene Flagship would have some crossover projects, e.g., trying to make computers more closely resemble human brains in terms of energy use and processing power.

The Human Brain Project’s (HBP) Silicon Brains webpage notes this about their neuromorphic computing platform,

Neuromorphic computing implements aspects of biological neural networks as analogue or digital copies on electronic circuits. The goal of this approach is twofold: Offering a tool for neuroscience to understand the dynamic processes of learning and development in the brain and applying brain inspiration to generic cognitive computing. Key advantages of neuromorphic computing compared to traditional approaches are energy efficiency, execution speed, robustness against local failures and the ability to learn.

Neuromorphic Computing in the HBP

In the HBP the neuromorphic computing Subproject carries out two major activities: Constructing two large-scale, unique neuromorphic machines and prototyping the next generation neuromorphic chips.

The large-scale neuromorphic machines are based on two complementary principles. The many-core SpiNNaker machine located in Manchester [emphasis mine] (UK) connects 1 million ARM processors with a packet-based network optimized for the exchange of neural action potentials (spikes). The BrainScaleS physical model machine located in Heidelberg (Germany) implements analogue electronic models of 4 Million neurons and 1 Billion synapses on 20 silicon wafers. Both machines are integrated into the HBP collaboratory and offer full software support for their configuration, operation and data analysis.

The most prominent feature of the neuromorphic machines is their execution speed. The SpiNNaker system runs at real-time, BrainScaleS is implemented as an accelerated system and operates at 10,000 times real-time. Simulations at conventional supercomputers typical run factors of 1000 slower than biology and cannot access the vastly different timescales involved in learning and development ranging from milliseconds to years.

Recent research in neuroscience and computing has indicated that learning and development are a key aspect for neuroscience and real world applications of cognitive computing. HBP is the only project worldwide addressing this need with dedicated novel hardware architectures.

I’ve highlighted Manchester because that’s a very important city where graphene is concerned. The UK’s National Graphene Institute is housed at the University of Manchester where graphene was first isolated in 2004 by two scientists, Andre Geim and Konstantin (Kostya) Novoselov. (For their effort, they were awarded the Nobel Prize for physics in 2010.)

Getting back to the HBP (and the Graphene Flagship for that matter), the funding should be drying up sometime around 2023 and I wonder if it will be possible to assess the impact.

Memristors with better mimicry of synapses

It seems to me it’s been quite a while since I’ve stumbled across a memristor story from the University of Micihigan but it was worth waiting for. (Much of the research around memristors has to do with their potential application in neuromorphic (brainlike) computers.) From a December 17, 2018 news item on ScienceDaily,

A new electronic device developed at the University of Michigan can directly model the behaviors of a synapse, which is a connection between two neurons.

For the first time, the way that neurons share or compete for resources can be explored in hardware without the need for complicated circuits.

“Neuroscientists have argued that competition and cooperation behaviors among synapses are very important. Our new memristive devices allow us to implement a faithful model of these behaviors in a solid-state system,” said Wei Lu, U-M professor of electrical and computer engineering and senior author of the study in Nature Materials.

A December 17, 2018 University of Michigan news release (also on EurekAlert), which originated the news item, provides an explanation of memristors and their ‘similarity’ to synapses while providing more details about this latest research,

Memristors are electrical resistors with memory–advanced electronic devices that regulate current based on the history of the voltages applied to them. They can store and process data simultaneously, which makes them a lot more efficient than traditional systems. They could enable new platforms that process a vast number of signals in parallel and are capable of advanced machine learning.

The memristor is a good model for a synapse. It mimics the way that the connections between neurons strengthen or weaken when signals pass through them. But the changes in conductance typically come from changes in the shape of the channels of conductive material within the memristor. These channels–and the memristor’s ability to conduct electricity–could not be precisely controlled in previous devices.

Now, the U-M team has made a memristor in which they have better command of the conducting pathways.They developed a new material out of the semiconductor molybdenum disulfide–a “two-dimensional” material that can be peeled into layers just a few atoms thick. Lu’s team injected lithium ions into the gaps between molybdenum disulfide layers.
They found that if there are enough lithium ions present, the molybdenum sulfide transforms its lattice structure, enabling electrons to run through the film easily as if it were a metal. But in areas with too few lithium ions, the molybdenum sulfide restores its original lattice structure and becomes a semiconductor, and electrical signals have a hard time getting through.

The lithium ions are easy to rearrange within the layer by sliding them with an electric field. This changes the size of the regions that conduct electricity little by little and thereby controls the device’s conductance.

“Because we change the ‘bulk’ properties of the film, the conductance change is much more gradual and much more controllable,” Lu said.

In addition to making the devices behave better, the layered structure enabled Lu’s team to link multiple memristors together through shared lithium ions–creating a kind of connection that is also found in brains. A single neuron’s dendrite, or its signal-receiving end, may have several synapses connecting it to the signaling arms of other neurons. Lu compares the availability of lithium ions to that of a protein that enables synapses to grow.

If the growth of one synapse releases these proteins, called plasticity-related proteins, other synapses nearby can also grow–this is cooperation. Neuroscientists have argued that cooperation between synapses helps to rapidly form vivid memories that last for decades and create associative memories, like a scent that reminds you of your grandmother’s house, for example. If the protein is scarce, one synapse will grow at the expense of the other–and this competition pares down our brains’ connections and keeps them from exploding with signals.
Lu’s team was able to show these phenomena directly using their memristor devices. In the competition scenario, lithium ions were drained away from one side of the device. The side with the lithium ions increased its conductance, emulating the growth, and the conductance of the device with little lithium was stunted.

In a cooperation scenario, they made a memristor network with four devices that can exchange lithium ions, and then siphoned some lithium ions from one device out to the others. In this case, not only could the lithium donor increase its conductance–the other three devices could too, although their signals weren’t as strong.

Lu’s team is currently building networks of memristors like these to explore their potential for neuromorphic computing, which mimics the circuitry of the brain.

Here’s a link to and a citation for the paper,

Ionic modulation and ionic coupling effects in MoS2 devices for neuromorphic computing by Xiaojian Zhu, Da Li, Xiaogan Liang, & Wei D. Lu. Nature Materials (2018) DOI: https://doi.org/10.1038/s41563-018-0248-5 Published 17 December 2018

This paper is behind a paywall.

The researchers have made images illustrating their work available,

A schematic of the molybdenum disulfide layers with lithium ions between them. On the right, the simplified inset shows how the molybdenum disulfide changes its atom arrangements in the presence and absence of the lithium atoms, between a metal (1T’ phase) and semiconductor (2H phase), respectively. Image credit: Xiaojian Zhu, Nanoelectronics Group, University of Michigan.

A diagram of a synapse receiving a signal from one of the connecting neurons. This signal activates the generation of plasticity-related proteins (PRPs), which help a synapse to grow. They can migrate to other synapses, which enables multiple synapses to grow at once. The new device is the first to mimic this process directly, without the need for software or complicated circuits. Image credit: Xiaojian Zhu, Nanoelectronics Group, University of Michigan.
An electron microscope image showing the rectangular gold (Au) electrodes representing signalling neurons and the rounded electrode representing the receiving neuron. The material of molybdenum disulfide layered with lithium connects the electrodes, enabling the simulation of cooperative growth among synapses. Image credit: Xiaojian Zhu, Nanoelectronics Group, University of Michigan.

That’s all folks.

An artificial synapse tuned by light, a ferromagnetic memristor, and a transparent, flexible artificial synapse

Down the memristor rabbit hole one more time.* I started out with news about two new papers and inadvertently found two more. In a bid to keep this posting to a manageable size, I’m stopping at four.

UK

In a June 19, 2019 Nanowerk Spotlight article, Dr. Neil Kemp discusses memristors and some of his latest work (Note: A link has been removed),

Memristor (or memory resistors) devices are non-volatile electronic memory devices that were first theorized by Leon Chua in the 1970’s. However, it was some thirty years later that the first practical device was fabricated. This was in 2008 when a group led by Stanley Williams at HP Research Labs realized that switching of the resistance between a conducting and less conducting state in metal-oxide thin-film devices was showing Leon Chua’s memristor behaviour.

The high interest in memristor devices also stems from the fact that these devices emulate the memory and learning properties of biological synapses. i.e. the electrical resistance value of the device is dependent on the history of the current flowing through it.

There is a huge effort underway to use memristor devices in neuromorphic computing applications and it is now reasonable to imagine the development of a new generation of artificial intelligent devices with very low power consumption (non-volatile), ultra-fast performance and high-density integration.

These discoveries come at an important juncture in microelectronics, since there is increasing disparity between computational needs of Big Data, Artificial Intelligence (A.I.) and the Internet of Things (IoT), and the capabilities of existing computers. The increases in speed, efficiency and performance of computer technology cannot continue in the same manner as it has done since the 1960s.

To date, most memristor research has focussed on the electronic switching properties of the device. However, for many applications it is useful to have an additional handle (or degree of freedom) on the device to control its resistive state. For example memory and processing in the brain also involves numerous chemical and bio-chemical reactions that control the brain structure and its evolution through development.

To emulate this in a simple solid-state system composed of just switches alone is not possible. In our research, we are interested in using light to mediate this essential control.

We have demonstrated that light can be used to make short and long-term memory and we have shown how light can modulate a special type of learning, called spike timing dependent plasticity (STDP). STDP involves two neuronal spikes incident across a synapse at the same time. Depending on the relative timing of the spikes and their overlap across the synaptic cleft, the connection strength is other strengthened or weakened.

In our earlier work, we were only able to achieve to small switching effects in memristors using light. In our latest work (Advanced Electronic Materials, “Percolation Threshold Enables Optical Resistive-Memory Switching and Light-Tuneable Synaptic Learning in Segregated Nanocomposites”), we take advantage of a percolating-like nanoparticle morphology to vastly increase the magnitude of the switching between electronic resistance states when light is incident on the device.

We have used an inhomogeneous percolating network consisting of metallic nanoparticles distributed in filamentary-like conduction paths. Electronic conduction and the resistance of the device is very sensitive to any disruption of the conduction path(s).

By embedding the nanoparticles in a polymer that can expand or contract with light the conduction pathways are broken or re-connected causing very large changes in the electrical resistance and memristance of the device.

Our devices could lead to the development of new memristor-based artificial intelligence systems that are adaptive and reconfigurable using a combination of optical and electronic signalling. Furthermore, they have the potential for the development of very fast optical cameras for artificial intelligence recognition systems.

Our work provides a nice proof-of-concept but the materials used means the optical switching is slow. The materials are also not well suited to industry fabrication. In our on-going work we are addressing these switching speed issues whilst also focussing on industry compatible materials.

Currently we are working on a new type of optical memristor device that should give us orders of magnitude improvement in the optical switching speeds whilst also retaining a large difference between the resistance on and off states. We hope to be able to achieve nanosecond switching speeds. The materials used are also compatible with industry standard methods of fabrication.

The new devices should also have applications in optical communications, interfacing and photonic computing. We are currently looking for commercial investors to help fund the research on these devices so that we can bring the device specifications to a level of commercial interest.

If you’re interested in memristors, Kemp’s article is well written and quite informative for nonexperts, assuming of course you can tolerate not understanding everything perfectly.

Here are links and citations for two papers. The first is the latest referred to in the article, a May 2019 paper and the second is a paper appearing in July 2019.

Percolation Threshold Enables Optical Resistive‐Memory Switching and Light‐Tuneable Synaptic Learning in Segregated Nanocomposites by Ayoub H. Jaafar, Mary O’Neill, Stephen M. Kelly, Emanuele Verrelli, Neil T. Kemp. Advanced Electronic Materials DOI: https://doi.org/10.1002/aelm.201900197 First published: 28 May 2019

Wavelength dependent light tunable resistive switching graphene oxide nonvolatile memory devices by Ayoub H.Jaafar, N.T.Kemp. DOI: https://doi.org/10.1016/j.carbon.2019.07.007 Carbon Available online 3 July 2019

The first paper (May 2019) is definitely behind a paywall and the second paper (July 2019) appears to be behind a paywall.

Dr. Kemp’s work has been featured here previously in a January 3, 2018 posting in the subsection titled, Shining a light on the memristor.

China

This work from China was announced in a June 20, 2019 news item on Nanowerk,

Memristors, demonstrated by solid-state devices with continuously tunable resistance, have emerged as a new paradigm for self-adaptive networks that require synapse-like functions. Spin-based memristors offer advantages over other types of memristors because of their significant endurance and high energy effciency.

However, it remains a challenge to build dense and functional spintronic memristors with structures and materials that are compatible with existing ferromagnetic devices. Ta/CoFeB/MgO heterostructures are commonly used in interfacial PMA-based [perpendicular magnetic anisotropy] magnetic tunnel junctions, which exhibit large tunnel magnetoresistance and are implemented in commercial MRAM [magnetic random access memory] products.

“To achieve the memristive function, DW is driven back and forth in a continuous manner in the CoFeB layer by applying in-plane positive or negative current pulses along the Ta layer, utilizing SOT that the current exerts on the CoFeB magnetization,” said Shuai Zhang, a coauthor in the paper. “Slowly propagating domain wall generates a creep in the detection area of the device, which yields a broad range of intermediate resistive states in the AHE [anomalous Hall effect] measurements. Consequently, AHE resistance is modulated in an analog manner, being controlled by the pulsed current characteristics including amplitude, duration, and repetition number.”

“For a follow-up study, we are working on more neuromorphic operations, such as spike-timing-dependent plasticity and paired pulsed facilitation,” concludes You. …

Here’s are links to and citations for the paper (Note: It’s a little confusing but I believe that one of the links will take you to the online version, as for the ‘open access’ link, keep reading),

A Spin–Orbit‐Torque Memristive Device by Shuai Zhang, Shijiang Luo, Nuo Xu, Qiming Zou, Min Song, Jijun Yun, Qiang Luo, Zhe Guo, Ruofan Li, Weicheng Tian, Xin Li, Hengan Zhou, Huiming Chen, Yue Zhang, Xiaofei Yang, Wanjun Jiang, Ka Shen, Jeongmin Hong, Zhe Yuan, Li Xi, Ke Xia, Sayeef Salahuddin, Bernard Dieny, Long You. Advanced Electronic Materials Volume 5, Issue 4 April 2019 (print version) 1800782 DOI: https://doi.org/10.1002/aelm.201800782 First published [online]: 30 January 2019 Note: there is another DOI, https://doi.org/10.1002/aelm.201970022 where you can have open access to Memristors: A Spin–Orbit‐Torque Memristive Device (Adv. Electron. Mater. 4/2019)

The paper published online in January 2019 is behind a paywall and the paper (almost the same title) published in April 2019 has a new DOI and is open access. Final note: I tried accessing the ‘free’ paper and opened up a free file for the artwork featuring the work from China on the back cover of the April 2019 of Advanced Electronic Materials.

Korea

Usually when I see the words transparency and flexibility, I expect to see graphene is one of the materials. That’s not the case for this paper (link to and citation for),

Transparent and flexible photonic artificial synapse with piezo-phototronic modulator: Versatile memory capability and higher order learning algorithm by Mohit Kumar, Joondong Kim, Ching-Ping Wong. Nano Energy Volume 63, September 2019, 103843 DOI: https://doi.org/10.1016/j.nanoen.2019.06.039 Available online 22 June 2019

Here’s the abstract for the paper where you’ll see that the material is made up of zinc oxide silver nanowires,

An artificial photonic synapse having tunable manifold synaptic response can be an essential step forward for the advancement of novel neuromorphic computing. In this work, we reported the development of highly transparent and flexible two-terminal ZnO/Ag-nanowires/PET photonic artificial synapse [emphasis mine]. The device shows purely photo-triggered all essential synaptic functions such as transition from short-to long-term plasticity, paired-pulse facilitation, and spike-timing-dependent plasticity, including in the versatile memory capability. Importantly, strain-induced piezo-phototronic effect within ZnO provides an additional degree of regulation to modulate all of the synaptic functions in multi-levels. The observed effect is quantitatively explained as a dynamic of photo-induced electron-hole trapping/detraining via the defect states such as oxygen vacancies. We revealed that the synaptic functions can be consolidated and converted by applied strain, which is not previously applied any of the reported synaptic devices. This study will open a new avenue to the scientific community to control and design highly transparent wearable neuromorphic computing.

This paper is behind a paywall.

Artificial synapse courtesy of nanowires

It looks like a popsicle to me,

Caption: Image captured by an electron microscope of a single nanowire memristor (highlighted in colour to distinguish it from other nanowires in the background image). Blue: silver electrode, orange: nanowire, yellow: platinum electrode. Blue bubbles are dispersed over the nanowire. They are made up of silver ions and form a bridge between the electrodes which increases the resistance. Credit: Forschungszentrum Jülich

Not a popsicle but a representation of a device (memristor) scientists claim mimics a biological nerve cell according to a December 5, 2018 news item on ScienceDaily,

Scientists from Jülich [Germany] together with colleagues from Aachen [Germany] and Turin [Italy] have produced a memristive element made from nanowires that functions in much the same way as a biological nerve cell. The component is able to both save and process information, as well as receive numerous signals in parallel. The resistive switching cell made from oxide crystal nanowires is thus proving to be the ideal candidate for use in building bioinspired “neuromorphic” processors, able to take over the diverse functions of biological synapses and neurons.

A Dec. 5, 2018 Forschungszentrum Jülich press release (also on EurekAlert), which originated the news item, provides more details,

Computers have learned a lot in recent years. Thanks to rapid progress in artificial intelligence they are now able to drive cars, translate texts, defeat world champions at chess, and much more besides. In doing so, one of the greatest challenges lies in the attempt to artificially reproduce the signal processing in the human brain. In neural networks, data are stored and processed to a high degree in parallel. Traditional computers on the other hand rapidly work through tasks in succession and clearly distinguish between the storing and processing of information. As a rule, neural networks can only be simulated in a very cumbersome and inefficient way using conventional hardware.

Systems with neuromorphic chips that imitate the way the human brain works offer significant advantages. Experts in the field describe this type of bioinspired computer as being able to work in a decentralised way, having at its disposal a multitude of processors, which, like neurons in the brain, are connected to each other by networks. If a processor breaks down, another can take over its function. What is more, just like in the brain, where practice leads to improved signal transfer, a bioinspired processor should have the capacity to learn.

“With today’s semiconductor technology, these functions are to some extent already achievable. These systems are however suitable for particular applications and require a lot of space and energy,” says Dr. Ilia Valov from Forschungszentrum Jülich. “Our nanowire devices made from zinc oxide crystals can inherently process and even store information, as well as being extremely small and energy efficient,” explains the researcher from Jülich’s Peter Grünberg Institute.

For years memristive cells have been ascribed the best chances of being capable of taking over the function of neurons and synapses in bioinspired computers. They alter their electrical resistance depending on the intensity and direction of the electric current flowing through them. In contrast to conventional transistors, their last resistance value remains intact even when the electric current is switched off. Memristors are thus fundamentally capable of learning.

In order to create these properties, scientists at Forschungszentrum Jülich and RWTH Aachen University used a single zinc oxide nanowire, produced by their colleagues from the polytechnic university in Turin. Measuring approximately one ten-thousandth of a millimeter in size, this type of nanowire is over a thousand times thinner than a human hair. The resulting memristive component not only takes up a tiny amount of space, but also is able to switch much faster than flash memory.

Nanowires offer promising novel physical properties compared to other solids and are used among other things in the development of new types of solar cells, sensors, batteries and computer chips. Their manufacture is comparatively simple. Nanowires result from the evaporation deposition of specified materials onto a suitable substrate, where they practically grow of their own accord.

In order to create a functioning cell, both ends of the nanowire must be attached to suitable metals, in this case platinum and silver. The metals function as electrodes, and in addition, release ions triggered by an appropriate electric current. The metal ions are able to spread over the surface of the wire and build a bridge to alter its conductivity.

Components made from single nanowires are, however, still too isolated to be of practical use in chips. Consequently, the next step being planned by the Jülich and Turin researchers is to produce and study a memristive element, composed of a larger, relatively easy to generate group of several hundred nanowires offering more exciting functionalities.

The Italians have also written about the work in a December 4, 2018 news item for the Polytecnico di Torino’s inhouse magazine, PoliFlash’. I like the image they’ve used better as it offers a bit more detail and looks less like a popsicle. First, the image,

Courtesy: Polytecnico di Torino

Now, the news item, which includes some historical information about the memristor (Note: There is some repetition and links have been removed),

Emulating and understanding the human brain is one of the most important challenges for modern technology: on the one hand, the ability to artificially reproduce the processing of brain signals is one of the cornerstones for the development of artificial intelligence, while on the other the understanding of the cognitive processes at the base of the human mind is still far away.

And the research published in the prestigious journal Nature Communications by Gianluca Milano and Carlo Ricciardi, PhD student and professor, respectively, of the Applied Science and Technology Department of the Politecnico di Torino, represents a step forward in these directions. In fact, the study entitled “Self-limited single nanowire systems combining all-in-one memristive and neuromorphic functionalities” shows how it is possible to artificially emulate the activity of synapses, i.e. the connections between neurons that regulate the learning processes in our brain, in a single “nanowire” with a diameter thousands of times smaller than that of a hair.

It is a crystalline nanowire that takes the “memristor”, the electronic device able to artificially reproduce the functions of biological synapses, to a more performing level. Thanks to the use of nanotechnologies, which allow the manipulation of matter at the atomic level, it was for the first time possible to combine into one single device the synaptic functions that were individually emulated through specific devices. For this reason, the nanowire allows an extreme miniaturisation of the “memristor”, significantly reducing the complexity and energy consumption of the electronic circuits necessary for the implementation of learning algorithms.

Starting from the theorisation of the “memristor” in 1971 by Prof. Leon Chua – now visiting professor at the Politecnico di Torino, who was conferred an honorary degree by the University in 2015 – this new technology will not only allow smaller and more performing devices to be created for the implementation of increasingly “intelligent” computers, but is also a significant step forward for the emulation and understanding of the functioning of the brain.

“The nanowire memristor – said Carlo Ricciardirepresents a model system for the study of physical and electrochemical phenomena that govern biological synapses at the nanoscale. The work is the result of the collaboration between our research team and the RWTH University of Aachen in Germany, supported by INRiM, the National Institute of Metrological Research, and IIT, the Italian Institute of Technology.”

h.t for the Italian info. to Nanowerk’s Dec. 10, 2018 news item.

Here’s a link to and a citation for the paper,

Self-limited single nanowire systems combining all-in-one memristive and neuromorphic functionalities by Gianluca Milano, Michael Luebben, Zheng Ma, Rafal Dunin-Borkowski, Luca Boarino, Candido F. Pirri, Rainer Waser, Carlo Ricciardi, & Ilia Valov. Nature Communicationsvolume 9, Article number: 5151 (2018) DOI: https://doi.org/10.1038/s41467-018-07330-7 Published: 04 December 2018

This paper is open access.

Just use the search term “memristor” in the blog search engine if you’re curious about the multitudinous number of postings on the topic here.

Two approaches to memristors

Within one day of each other in October 2018, two different teams working on memristors with applications to neuroprosthetics and neuromorphic computing (brainlike computing) announced their results.

Russian team

An October 15, 2018 (?) Lobachevsky University press release (also published on October 15, 2018 on EurekAlert) describes a new approach to memristors,

Biological neurons are coupled unidirectionally through a special junction called a synapse. An electrical signal is transmitted along a neuron after some biochemical reactions initiate a chemical release to activate an adjacent neuron. These junctions are crucial for cognitive functions, such as perception, learning and memory.

A group of researchers from Lobachevsky University in Nizhny Novgorod investigates the dynamics of an individual memristive device when it receives a neuron-like signal as well as the dynamics of a network of analog electronic neurons connected by means of a memristive device. According to Svetlana Gerasimova, junior researcher at the Physics and Technology Research Institute and at the Neurotechnology Department of Lobachevsky University, this system simulates the interaction between synaptically coupled brain neurons while the memristive device imitates a neuron axon.

A memristive device is a physical model of Chua’s [Dr. Leon Chua, University of California at Berkeley; see my May 9, 2008 posting for a brief description Dr. Chua’s theory] memristor, which is an electric circuit element capable of changing its resistance depending on the electric signal received at the input. The device based on a Au/ZrO2(Y)/TiN/Ti structure demonstrates reproducible bipolar switching between the low and high resistance states. Resistive switching is determined by the oxidation and reduction of segments of conducting channels (filaments) in the oxide film when voltage with different polarity is applied to it. In the context of the present work, the ability of a memristive device to change conductivity under the action of pulsed signals makes it an almost ideal electronic analog of a synapse.

Lobachevsky University scientists and engineers supported by the Russian Science Foundation (project No.16-19-00144) have experimentally implemented and theoretically described the synaptic connection of neuron-like generators using the memristive interface and investigated the characteristics of this connection.

“Each neuron is implemented in the form of a pulse signal generator based on the FitzHugh-Nagumo model. This model provides a qualitative description of the main neurons’ characteristics: the presence of the excitation threshold, the presence of excitable and self-oscillatory regimes with the possibility of a changeover. At the initial time moment, the master generator is in the self-oscillatory mode, the slave generator is in the excitable mode, and the memristive device is used as a synapse. The signal from the master generator is conveyed to the input of the memristive device, the signal from the output of the memristive device is transmitted to the input of the slave generator via the loading resistance. When the memristive device switches from a high resistance to a low resistance state, the connection between the two neuron-like generators is established. The master generator goes into the oscillatory mode and the signals of the generators are synchronized. Different signal modulation mode synchronizations were demonstrated for the Au/ZrO2(Y)/TiN/Ti memristive device,” – says Svetlana Gerasimova.

UNN researchers believe that the next important stage in the development of neuromorphic systems based on memristive devices is to apply such systems in neuroprosthetics. Memristive systems will provide a highly efficient imitation of synaptic connection due to the stochastic nature of the memristive phenomenon and can be used to increase the flexibility of the connections for neuroprosthetic purposes. Lobachevsky University scientists have vast experience in the development of neurohybrid systems. In particular, a series of experiments was performed with the aim of connecting the FitzHugh-Nagumo oscillator with a biological object, a rat brain hippocampal slice. The signal from the electronic neuron generator was transmitted through the optic fiber communication channel to the bipolar electrode which stimulated Schaffer collaterals (axons of pyramidal neurons in the CA3 field) in the hippocampal slices. “We are going to combine our efforts in the design of artificial neuromorphic systems and our experience of working with living cells to improve flexibility of prosthetics,” concludes S. Gerasimova.

The results of this research were presented at the 38th International Conference on Nonlinear Dynamics (Dynamics Days Europe) at Loughborough University (Great Britain).

This diagram illustrates an aspect of the work,

Caption: Schematic of electronic neurons coupling via a memristive device. Credit: Lobachevsky University

US team

The American Institute of Physics (AIP) announced the publication of a ‘memristor paper’ by a team from the University of Southern California (USC) in an October 16, 2018 news item on phys.org,

Just like their biological counterparts, hardware that mimics the neural circuitry of the brain requires building blocks that can adjust how they synapse, with some connections strengthening at the expense of others. One such approach, called memristors, uses current resistance to store this information. New work looks to overcome reliability issues in these devices by scaling memristors to the atomic level.

An October 16, 2018 AIP news release (also on EurekAlert), which originated the news item, delves further into the particulars of this particular piece of memristor research,

A group of researchers demonstrated a new type of compound synapse that can achieve synaptic weight programming and conduct vector-matrix multiplication with significant advances over the current state of the art. Publishing its work in the Journal of Applied Physics, from AIP Publishing, the group’s compound synapse is constructed with atomically thin boron nitride memristors running in parallel to ensure efficiency and accuracy.

The article appears in a special topic section of the journal devoted to “New Physics and Materials for Neuromorphic Computation,” which highlights new developments in physical and materials science research that hold promise for developing the very large-scale, integrated “neuromorphic” systems of tomorrow that will carry computation beyond the limitations of current semiconductors today.

“There’s a lot of interest in using new types of materials for memristors,” said Ivan Sanchez Esqueda, an author on the paper. “What we’re showing is that filamentary devices can work well for neuromorphic computing applications, when constructed in new clever ways.”

Current memristor technology suffers from a wide variation in how signals are stored and read across devices, both for different types of memristors as well as different runs of the same memristor. To overcome this, the researchers ran several memristors in parallel. The combined output can achieve accuracies up to five times those of conventional devices, an advantage that compounds as devices become more complex.

The choice to go to the subnanometer level, Sanchez said, was born out of an interest to keep all of these parallel memristors energy-efficient. An array of the group’s memristors were found to be 10,000 times more energy-efficient than memristors currently available.

“It turns out if you start to increase the number of devices in parallel, you can see large benefits in accuracy while still conserving power,” Sanchez said. Sanchez said the team next looks to further showcase the potential of the compound synapses by demonstrating their use completing increasingly complex tasks, such as image and pattern recognition.

Here’s an image illustrating the parallel artificial synapses,

Caption: Hardware that mimics the neural circuitry of the brain requires building blocks that can adjust how they synapse. One such approach, called memristors, uses current resistance to store this information. New work looks to overcome reliability issues in these devices by scaling memristors to the atomic level. Researchers demonstrated a new type of compound synapse that can achieve synaptic weight programming and conduct vector-matrix multiplication with significant advances over the current state of the art. They discuss their work in this week’s Journal of Applied Physics. This image shows a conceptual schematic of the 3D implementation of compound synapses constructed with boron nitride oxide (BNOx) binary memristors, and the crossbar array with compound BNOx synapses for neuromorphic computing applications. Credit: Ivan Sanchez Esqueda

Here’s a link to and a citation for the paper,

Efficient learning and crossbar operations with atomically-thin 2-D material compound synapses by Ivan Sanchez Esqueda, Huan Zhao and Han Wang. The article will appear in the Journal of Applied Physics Oct. 16, 2018 (DOI: 10.1063/1.5042468).

This paper is behind a paywall.

*Title corrected from ‘Two approaches to memristors featuring’ to ‘Two approaches to memristors’ on May 31, 2019 at 1455 hours PDT.

Artificial synapse based on tantalum oxide from Korean researchers

This memristor story comes from South Korea as we progress on the way to neuromorphic computing (brainlike computing). A Sept. 7, 2018 news item on ScienceDaily makes the announcement,

A research team led by Director Myoung-Jae Lee from the Intelligent Devices and Systems Research Group at DGIST (Daegu Gyeongbuk Institute of Science and Technology) has succeeded in developing an artificial synaptic device that mimics the function of the nerve cells (neurons) and synapses that are response for memory in human brains. [sic]

Synapses are where axons and dendrites meet so that neurons in the human brain can send and receive nerve signals; there are known to be hundreds of trillions of synapses in the human brain.

This chemical synapse information transfer system, which transfers information from the brain, can handle high-level parallel arithmetic with very little energy, so research on artificial synaptic devices, which mimic the biological function of a synapse, is under way worldwide.

Dr. Lee’s research team, through joint research with teams led by Professor Gyeong-Su Park from Seoul National University; Professor Sung Kyu Park from Chung-ang University; and Professor Hyunsang Hwang from Pohang University of Science and Technology (POSTEC), developed a high-reliability artificial synaptic device with multiple values by structuring tantalum oxide — a trans-metallic material — into two layers of Ta2O5-x and TaO2-x and by controlling its surface.

A September 7, 2018 DGIST press release (also on EurekAlert), which originated the news item, delves further into the work,

The artificial synaptic device developed by the research team is an electrical synaptic device that simulates the function of synapses in the brain as the resistance of the tantalum oxide layer gradually increases or decreases depending on the strength of the electric signals. It has succeeded in overcoming durability limitations of current devices by allowing current control only on one layer of Ta2O5-x.

In addition, the research team successfully implemented an experiment that realized synapse plasticity [or synaptic plasticity], which is the process of creating, storing, and deleting memories, such as long-term strengthening of memory and long-term suppression of memory deleting by adjusting the strength of the synapse connection between neurons.

The non-volatile multiple-value data storage method applied by the research team has the technological advantage of having a small area of an artificial synaptic device system, reducing circuit connection complexity, and reducing power consumption by more than one-thousandth compared to data storage methods based on digital signals using 0 and 1 such as volatile CMOS (Complementary Metal Oxide Semiconductor).

The high-reliability artificial synaptic device developed by the research team can be used in ultra-low-power devices or circuits for processing massive amounts of big data due to its capability of low-power parallel arithmetic. It is expected to be applied to next-generation intelligent semiconductor device technologies such as development of artificial intelligence (AI) including machine learning and deep learning and brain-mimicking semiconductors.

Dr. Lee said, “This research secured the reliability of existing artificial synaptic devices and improved the areas pointed out as disadvantages. We expect to contribute to the development of AI based on the neuromorphic system that mimics the human brain by creating a circuit that imitates the function of neurons.”

Here’s a link to and a citation for the paper,

Reliable Multivalued Conductance States in TaOx Memristors through Oxygen Plasma-Assisted Electrode Deposition with in Situ-Biased Conductance State Transmission Electron Microscopy Analysis by Myoung-Jae Lee, Gyeong-Su Park, David H. Seo, Sung Min Kwon, Hyeon-Jun Lee, June-Seo Kim, MinKyung Jung, Chun-Yeol You, Hyangsook Lee, Hee-Goo Kim, Su-Been Pang, Sunae Seo, Hyunsang Hwang, and Sung Kyu Park. ACS Appl. Mater. Interfaces, 2018, 10 (35), pp 29757–29765 DOI: 10.1021/acsami.8b09046 Publication Date (Web): July 23, 2018

Copyright © 2018 American Chemical Society

This paper is open access.

You can find other memristor and neuromorphic computing stories here by using the search terms I’ve highlighted,  My latest (more or less) is an April 19, 2018 posting titled, New path to viable memristor/neuristor?

Finally, here’s an image from the Korean researchers that accompanied their work,

Caption: Representation of neurons and synapses in the human brain. The magnified synapse represents the portion mimicked using solid-state devices. Credit: Daegu Gyeongbuk Institute of Science and Technology(DGIST)

Bringing memristors to the masses and cutting down on energy use

One of my earliest posts featuring memristors (May 9, 2008) focused on their potential for energy savings but since then most of my postings feature research into their application in the field of neuromorphic (brainlike) computing. (For a description and abbreviated history of the memristor go to this page on my Nanotech Mysteries Wiki.)

In a sense this July 30, 2018 news item on Nanowerk is a return to the beginning,

A new way of arranging advanced computer components called memristors on a chip could enable them to be used for general computing, which could cut energy consumption by a factor of 100.

This would improve performance in low power environments such as smartphones or make for more efficient supercomputers, says a University of Michigan researcher.

“Historically, the semiconductor industry has improved performance by making devices faster. But although the processors and memories are very fast, they can’t be efficient because they have to wait for data to come in and out,” said Wei Lu, U-M professor of electrical and computer engineering and co-founder of memristor startup Crossbar Inc.

Memristors might be the answer. Named as a portmanteau of memory and resistor, they can be programmed to have different resistance states–meaning they store information as resistance levels. These circuit elements enable memory and processing in the same device, cutting out the data transfer bottleneck experienced by conventional computers in which the memory is separate from the processor.

A July 30, 2018 University of Michigan news release (also on EurekAlert), which originated the news item, expands on the theme,

… unlike ordinary bits, which are 1 or 0, memristors can have resistances that are on a continuum. Some applications, such as computing that mimics the brain (neuromorphic), take advantage of the analog nature of memristors. But for ordinary computing, trying to differentiate among small variations in the current passing through a memristor device is not precise enough for numerical calculations.

Lu and his colleagues got around this problem by digitizing the current outputs—defining current ranges as specific bit values (i.e., 0 or 1). The team was also able to map large mathematical problems into smaller blocks within the array, improving the efficiency and flexibility of the system.

Computers with these new blocks, which the researchers call “memory-processing units,” could be particularly useful for implementing machine learning and artificial intelligence algorithms. They are also well suited to tasks that are based on matrix operations, such as simulations used for weather prediction. The simplest mathematical matrices, akin to tables with rows and columns of numbers, can map directly onto the grid of memristors.

The memristor array situated on a circuit board.

The memristor array situated on a circuit board. Credit: Mohammed Zidan, Nanoelectronics group, University of Michigan.

Once the memristors are set to represent the numbers, operations that multiply and sum the rows and columns can be taken care of simultaneously, with a set of voltage pulses along the rows. The current measured at the end of each column contains the answers. A typical processor, in contrast, would have to read the value from each cell of the matrix, perform multiplication, and then sum up each column in series.

“We get the multiplication and addition in one step. It’s taken care of through physical laws. We don’t need to manually multiply and sum in a processor,” Lu said.

His team chose to solve partial differential equations as a test for a 32×32 memristor array—which Lu imagines as just one block of a future system. These equations, including those behind weather forecasting, underpin many problems science and engineering but are very challenging to solve. The difficulty comes from the complicated forms and multiple variables needed to model physical phenomena.

When solving partial differential equations exactly is impossible, solving them approximately can require supercomputers. These problems often involve very large matrices of data, so the memory-processor communication bottleneck is neatly solved with a memristor array. The equations Lu’s team used in their demonstration simulated a plasma reactor, such as those used for integrated circuit fabrication.

This work is described in a study, “A general memristor-based partial differential equation solver,” published in the journal Nature Electronics.

It was supported by the Defense Advanced Research Projects Agency (DARPA) (grant no. HR0011-17-2-0018) and by the National Science Foundation (NSF) (grant no. CCF-1617315).

Here’s a link and a citation for the paper,

A general memristor-based partial differential equation solver by Mohammed A. Zidan, YeonJoo Jeong, Jihang Lee, Bing Chen, Shuo Huang, Mark J. Kushner & Wei D. Lu. Nature Electronicsvolume 1, pages411–420 (2018) DOI: https://doi.org/10.1038/s41928-018-0100-6 Published: 13 July 2018

This paper is behind a paywall.

For the curious, Dr. Lu’s startup company, Crossbar can be found here.