Tag Archives: neuromorphic computing

Artificial synapse based on tantalum oxide from Korean researchers

This memristor story comes from South Korea as we progress on the way to neuromorphic computing (brainlike computing). A Sept. 7, 2018 news item on ScienceDaily makes the announcement,

A research team led by Director Myoung-Jae Lee from the Intelligent Devices and Systems Research Group at DGIST (Daegu Gyeongbuk Institute of Science and Technology) has succeeded in developing an artificial synaptic device that mimics the function of the nerve cells (neurons) and synapses that are response for memory in human brains. [sic]

Synapses are where axons and dendrites meet so that neurons in the human brain can send and receive nerve signals; there are known to be hundreds of trillions of synapses in the human brain.

This chemical synapse information transfer system, which transfers information from the brain, can handle high-level parallel arithmetic with very little energy, so research on artificial synaptic devices, which mimic the biological function of a synapse, is under way worldwide.

Dr. Lee’s research team, through joint research with teams led by Professor Gyeong-Su Park from Seoul National University; Professor Sung Kyu Park from Chung-ang University; and Professor Hyunsang Hwang from Pohang University of Science and Technology (POSTEC), developed a high-reliability artificial synaptic device with multiple values by structuring tantalum oxide — a trans-metallic material — into two layers of Ta2O5-x and TaO2-x and by controlling its surface.

A September 7, 2018 DGIST press release (also on EurekAlert), which originated the news item, delves further into the work,

The artificial synaptic device developed by the research team is an electrical synaptic device that simulates the function of synapses in the brain as the resistance of the tantalum oxide layer gradually increases or decreases depending on the strength of the electric signals. It has succeeded in overcoming durability limitations of current devices by allowing current control only on one layer of Ta2O5-x.

In addition, the research team successfully implemented an experiment that realized synapse plasticity [or synaptic plasticity], which is the process of creating, storing, and deleting memories, such as long-term strengthening of memory and long-term suppression of memory deleting by adjusting the strength of the synapse connection between neurons.

The non-volatile multiple-value data storage method applied by the research team has the technological advantage of having a small area of an artificial synaptic device system, reducing circuit connection complexity, and reducing power consumption by more than one-thousandth compared to data storage methods based on digital signals using 0 and 1 such as volatile CMOS (Complementary Metal Oxide Semiconductor).

The high-reliability artificial synaptic device developed by the research team can be used in ultra-low-power devices or circuits for processing massive amounts of big data due to its capability of low-power parallel arithmetic. It is expected to be applied to next-generation intelligent semiconductor device technologies such as development of artificial intelligence (AI) including machine learning and deep learning and brain-mimicking semiconductors.

Dr. Lee said, “This research secured the reliability of existing artificial synaptic devices and improved the areas pointed out as disadvantages. We expect to contribute to the development of AI based on the neuromorphic system that mimics the human brain by creating a circuit that imitates the function of neurons.”

Here’s a link to and a citation for the paper,

Reliable Multivalued Conductance States in TaOx Memristors through Oxygen Plasma-Assisted Electrode Deposition with in Situ-Biased Conductance State Transmission Electron Microscopy Analysis by Myoung-Jae Lee, Gyeong-Su Park, David H. Seo, Sung Min Kwon, Hyeon-Jun Lee, June-Seo Kim, MinKyung Jung, Chun-Yeol You, Hyangsook Lee, Hee-Goo Kim, Su-Been Pang, Sunae Seo, Hyunsang Hwang, and Sung Kyu Park. ACS Appl. Mater. Interfaces, 2018, 10 (35), pp 29757–29765 DOI: 10.1021/acsami.8b09046 Publication Date (Web): July 23, 2018

Copyright © 2018 American Chemical Society

This paper is open access.

You can find other memristor and neuromorphic computing stories here by using the search terms I’ve highlighted,  My latest (more or less) is an April 19, 2018 posting titled, New path to viable memristor/neuristor?

Finally, here’s an image from the Korean researchers that accompanied their work,

Caption: Representation of neurons and synapses in the human brain. The magnified synapse represents the portion mimicked using solid-state devices. Credit: Daegu Gyeongbuk Institute of Science and Technology(DGIST)

Bringing memristors to the masses and cutting down on energy use

One of my earliest posts featuring memristors (May 9, 2008) focused on their potential for energy savings but since then most of my postings feature research into their application in the field of neuromorphic (brainlike) computing. (For a description and abbreviated history of the memristor go to this page on my Nanotech Mysteries Wiki.)

In a sense this July 30, 2018 news item on Nanowerk is a return to the beginning,

A new way of arranging advanced computer components called memristors on a chip could enable them to be used for general computing, which could cut energy consumption by a factor of 100.

This would improve performance in low power environments such as smartphones or make for more efficient supercomputers, says a University of Michigan researcher.

“Historically, the semiconductor industry has improved performance by making devices faster. But although the processors and memories are very fast, they can’t be efficient because they have to wait for data to come in and out,” said Wei Lu, U-M professor of electrical and computer engineering and co-founder of memristor startup Crossbar Inc.

Memristors might be the answer. Named as a portmanteau of memory and resistor, they can be programmed to have different resistance states–meaning they store information as resistance levels. These circuit elements enable memory and processing in the same device, cutting out the data transfer bottleneck experienced by conventional computers in which the memory is separate from the processor.

A July 30, 2018 University of Michigan news release (also on EurekAlert), which originated the news item, expands on the theme,

… unlike ordinary bits, which are 1 or 0, memristors can have resistances that are on a continuum. Some applications, such as computing that mimics the brain (neuromorphic), take advantage of the analog nature of memristors. But for ordinary computing, trying to differentiate among small variations in the current passing through a memristor device is not precise enough for numerical calculations.

Lu and his colleagues got around this problem by digitizing the current outputs—defining current ranges as specific bit values (i.e., 0 or 1). The team was also able to map large mathematical problems into smaller blocks within the array, improving the efficiency and flexibility of the system.

Computers with these new blocks, which the researchers call “memory-processing units,” could be particularly useful for implementing machine learning and artificial intelligence algorithms. They are also well suited to tasks that are based on matrix operations, such as simulations used for weather prediction. The simplest mathematical matrices, akin to tables with rows and columns of numbers, can map directly onto the grid of memristors.

The memristor array situated on a circuit board.

The memristor array situated on a circuit board. Credit: Mohammed Zidan, Nanoelectronics group, University of Michigan.

Once the memristors are set to represent the numbers, operations that multiply and sum the rows and columns can be taken care of simultaneously, with a set of voltage pulses along the rows. The current measured at the end of each column contains the answers. A typical processor, in contrast, would have to read the value from each cell of the matrix, perform multiplication, and then sum up each column in series.

“We get the multiplication and addition in one step. It’s taken care of through physical laws. We don’t need to manually multiply and sum in a processor,” Lu said.

His team chose to solve partial differential equations as a test for a 32×32 memristor array—which Lu imagines as just one block of a future system. These equations, including those behind weather forecasting, underpin many problems science and engineering but are very challenging to solve. The difficulty comes from the complicated forms and multiple variables needed to model physical phenomena.

When solving partial differential equations exactly is impossible, solving them approximately can require supercomputers. These problems often involve very large matrices of data, so the memory-processor communication bottleneck is neatly solved with a memristor array. The equations Lu’s team used in their demonstration simulated a plasma reactor, such as those used for integrated circuit fabrication.

This work is described in a study, “A general memristor-based partial differential equation solver,” published in the journal Nature Electronics.

It was supported by the Defense Advanced Research Projects Agency (DARPA) (grant no. HR0011-17-2-0018) and by the National Science Foundation (NSF) (grant no. CCF-1617315).

Here’s a link and a citation for the paper,

A general memristor-based partial differential equation solver by Mohammed A. Zidan, YeonJoo Jeong, Jihang Lee, Bing Chen, Shuo Huang, Mark J. Kushner & Wei D. Lu. Nature Electronicsvolume 1, pages411–420 (2018) DOI: https://doi.org/10.1038/s41928-018-0100-6 Published: 13 July 2018

This paper is behind a paywall.

For the curious, Dr. Lu’s startup company, Crossbar can be found here.

If only AI had a brain (a Wizard of Oz reference?)

The title, which I’ve borrowed from the news release, is the only Wizard of Oz reference that I can find but it works so well, you don’t really need anything more.

Moving onto the news, a July 23, 2018 news item on phys.org announces new work on developing an artificial synapse (Note: A link has been removed),

Digital computation has rendered nearly all forms of analog computation obsolete since as far back as the 1950s. However, there is one major exception that rivals the computational power of the most advanced digital devices: the human brain.

The human brain is a dense network of neurons. Each neuron is connected to tens of thousands of others, and they use synapses to fire information back and forth constantly. With each exchange, the brain modulates these connections to create efficient pathways in direct response to the surrounding environment. Digital computers live in a world of ones and zeros. They perform tasks sequentially, following each step of their algorithms in a fixed order.

A team of researchers from Pitt’s [University of Pittsburgh] Swanson School of Engineering have developed an “artificial synapse” that does not process information like a digital computer but rather mimics the analog way the human brain completes tasks. Led by Feng Xiong, assistant professor of electrical and computer engineering, the researchers published their results in the recent issue of the journal Advanced Materials (DOI: 10.1002/adma.201802353). His Pitt co-authors include Mohammad Sharbati (first author), Yanhao Du, Jorge Torres, Nolan Ardolino, and Minhee Yun.

A July 23, 2018 University of Pittsburgh Swanson School of Engineering news release (also on EurekAlert), which originated the news item, provides further information,

“The analog nature and massive parallelism of the brain are partly why humans can outperform even the most powerful computers when it comes to higher order cognitive functions such as voice recognition or pattern recognition in complex and varied data sets,” explains Dr. Xiong.

An emerging field called “neuromorphic computing” focuses on the design of computational hardware inspired by the human brain. Dr. Xiong and his team built graphene-based artificial synapses in a two-dimensional honeycomb configuration of carbon atoms. Graphene’s conductive properties allowed the researchers to finely tune its electrical conductance, which is the strength of the synaptic connection or the synaptic weight. The graphene synapse demonstrated excellent energy efficiency, just like biological synapses.

In the recent resurgence of artificial intelligence, computers can already replicate the brain in certain ways, but it takes about a dozen digital devices to mimic one analog synapse. The human brain has hundreds of trillions of synapses for transmitting information, so building a brain with digital devices is seemingly impossible, or at the very least, not scalable. Xiong Lab’s approach provides a possible route for the hardware implementation of large-scale artificial neural networks.

According to Dr. Xiong, artificial neural networks based on the current CMOS (complementary metal-oxide semiconductor) technology will always have limited functionality in terms of energy efficiency, scalability, and packing density. “It is really important we develop new device concepts for synaptic electronics that are analog in nature, energy-efficient, scalable, and suitable for large-scale integrations,” he says. “Our graphene synapse seems to check all the boxes on these requirements so far.”

With graphene’s inherent flexibility and excellent mechanical properties, these graphene-based neural networks can be employed in flexible and wearable electronics to enable computation at the “edge of the internet”–places where computing devices such as sensors make contact with the physical world.

“By empowering even a rudimentary level of intelligence in wearable electronics and sensors, we can track our health with smart sensors, provide preventive care and timely diagnostics, monitor plants growth and identify possible pest issues, and regulate and optimize the manufacturing process–significantly improving the overall productivity and quality of life in our society,” Dr. Xiong says.

The development of an artificial brain that functions like the analog human brain still requires a number of breakthroughs. Researchers need to find the right configurations to optimize these new artificial synapses. They will need to make them compatible with an array of other devices to form neural networks, and they will need to ensure that all of the artificial synapses in a large-scale neural network behave in the same exact manner. Despite the challenges, Dr. Xiong says he’s optimistic about the direction they’re headed.

“We are pretty excited about this progress since it can potentially lead to the energy-efficient, hardware implementation of neuromorphic computing, which is currently carried out in power-intensive GPU clusters. The low-power trait of our artificial synapse and its flexible nature make it a suitable candidate for any kind of A.I. device, which would revolutionize our lives, perhaps even more than the digital revolution we’ve seen over the past few decades,” Dr. Xiong says.

There is a visual representation of this artificial synapse,

Caption: Pitt engineers built a graphene-based artificial synapse in a two-dimensional, honeycomb configuration of carbon atoms that demonstrated excellent energy efficiency comparable to biological synapses Credit: Swanson School of Engineering

Here’s a link to and a citation for the paper,

Low‐Power, Electrochemically Tunable Graphene Synapses for Neuromorphic Computing by Mohammad Taghi Sharbati, Yanhao Du, Jorge Torres, Nolan D. Ardolino, Minhee Yun, Feng Xiong. Advanced Materials DOP: https://doi.org/10.1002/adma.201802353 First published [online]: 23 July 2018

This paper is behind a paywall.

I did look at the paper and if I understand it rightly, this approach is different from the memristor-based approaches that I have so often featured here. More than that I cannot say.

Finally, the Wizard of Oz song ‘If I Only Had a Brain’,

Brainy and brainy: a novel synaptic architecture and a neuromorphic computing platform called SpiNNaker

I have two items about brainlike computing. The first item hearkens back to memristors, a topic I have been following since 2008. (If you’re curious about the various twists and turns just enter  the term ‘memristor’ in this blog’s search engine.) The latest on memristors is from a team than includes IBM (US), École Politechnique Fédérale de Lausanne (EPFL; Swizterland), and the New Jersey Institute of Technology (NJIT; US). The second bit comes from a Jülich Research Centre team in Germany and concerns an approach to brain-like computing that does not include memristors.

Multi-memristive synapses

In the inexorable march to make computers function more like human brains (neuromorphic engineering/computing), an international team has announced its latest results in a July 10, 2018 news item on Nanowerk,

Two New Jersey Institute of Technology (NJIT) researchers, working with collaborators from the IBM Research Zurich Laboratory and the École Polytechnique Fédérale de Lausanne, have demonstrated a novel synaptic architecture that could lead to a new class of information processing systems inspired by the brain.

The findings are an important step toward building more energy-efficient computing systems that also are capable of learning and adaptation in the real world. …

A July 10, 2018 NJIT news release (also on EurekAlert) by Tracey Regan, which originated by the news item, adds more details,

The researchers, Bipin Rajendran, an associate professor of electrical and computer engineering, and S. R. Nandakumar, a graduate student in electrical engineering, have been developing brain-inspired computing systems that could be used for a wide range of big data applications.

Over the past few years, deep learning algorithms have proven to be highly successful in solving complex cognitive tasks such as controlling self-driving cars and language understanding. At the heart of these algorithms are artificial neural networks – mathematical models of the neurons and synapses of the brain – that are fed huge amounts of data so that the synaptic strengths are autonomously adjusted to learn the intrinsic features and hidden correlations in these data streams.

However, the implementation of these brain-inspired algorithms on conventional computers is highly inefficient, consuming huge amounts of power and time. This has prompted engineers to search for new materials and devices to build special-purpose computers that can incorporate the algorithms. Nanoscale memristive devices, electrical components whose conductivity depends approximately on prior signaling activity, can be used to represent the synaptic strength between the neurons in artificial neural networks.

While memristive devices could potentially lead to faster and more power-efficient computing systems, they are also plagued by several reliability issues that are common to nanoscale devices. Their efficiency stems from their ability to be programmed in an analog manner to store multiple bits of information; however, their electrical conductivities vary in a non-deterministic and non-linear fashion.

In the experiment, the team showed how multiple nanoscale memristive devices exhibiting these characteristics could nonetheless be configured to efficiently implement artificial intelligence algorithms such as deep learning. Prototype chips from IBM containing more than one million nanoscale phase-change memristive devices were used to implement a neural network for the detection of hidden patterns and correlations in time-varying signals.

“In this work, we proposed and experimentally demonstrated a scheme to obtain high learning efficiencies with nanoscale memristive devices for implementing learning algorithms,” Nandakumar says. “The central idea in our demonstration was to use several memristive devices in parallel to represent the strength of a synapse of a neural network, but only chose one of them to be updated at each step based on the neuronal activity.”

Here’s a link to and a citation for the paper,

Neuromorphic computing with multi-memristive synapses by Irem Boybat, Manuel Le Gallo, S. R. Nandakumar, Timoleon Moraitis, Thomas Parnell, Tomas Tuma, Bipin Rajendran, Yusuf Leblebici, Abu Sebastian, & Evangelos Eleftheriou. Nature Communications volume 9, Article number: 2514 (2018) DOI: https://doi.org/10.1038/s41467-018-04933-y Published 28 June 2018

This is an open access paper.

Also they’ve got a couple of very nice introductory paragraphs which I’m including here, (from the June 28, 2018 paper in Nature Communications; Note: Links have been removed),

The human brain with less than 20 W of power consumption offers a processing capability that exceeds the petaflops mark, and thus outperforms state-of-the-art supercomputers by several orders of magnitude in terms of energy efficiency and volume. Building ultra-low-power cognitive computing systems inspired by the operating principles of the brain is a promising avenue towards achieving such efficiency. Recently, deep learning has revolutionized the field of machine learning by providing human-like performance in areas, such as computer vision, speech recognition, and complex strategic games1. However, current hardware implementations of deep neural networks are still far from competing with biological neural systems in terms of real-time information-processing capabilities with comparable energy consumption.

One of the reasons for this inefficiency is that most neural networks are implemented on computing systems based on the conventional von Neumann architecture with separate memory and processing units. There are a few attempts to build custom neuromorphic hardware that is optimized to implement neural algorithms2,3,4,5. However, as these custom systems are typically based on conventional silicon complementary metal oxide semiconductor (CMOS) circuitry, the area efficiency of such hardware implementations will remain relatively low, especially if in situ learning and non-volatile synaptic behavior have to be incorporated. Recently, a new class of nanoscale devices has shown promise for realizing the synaptic dynamics in a compact and power-efficient manner. These memristive devices store information in their resistance/conductance states and exhibit conductivity modulation based on the programming history6,7,8,9. The central idea in building cognitive hardware based on memristive devices is to store the synaptic weights as their conductance states and to perform the associated computational tasks in place.

The two essential synaptic attributes that need to be emulated by memristive devices are the synaptic efficacy and plasticity. …

It gets more complicated from there.

Now onto the next bit.

SpiNNaker

At a guess, those capitalized N’s are meant to indicate ‘neural networks’. As best I can determine, SpiNNaker is not based on the memristor. Moving on, a July 11, 2018 news item on phys.org announces work from a team examining how neuromorphic hardware and neuromorphic software work together,

A computer built to mimic the brain’s neural networks produces similar results to that of the best brain-simulation supercomputer software currently used for neural-signaling research, finds a new study published in the open-access journal Frontiers in Neuroscience. Tested for accuracy, speed and energy efficiency, this custom-built computer named SpiNNaker, has the potential to overcome the speed and power consumption problems of conventional supercomputers. The aim is to advance our knowledge of neural processing in the brain, to include learning and disorders such as epilepsy and Alzheimer’s disease.

A July 11, 2018 Frontiers Publishing news release on EurekAlert, which originated the news item, expands on the latest work,

“SpiNNaker can support detailed biological models of the cortex–the outer layer of the brain that receives and processes information from the senses–delivering results very similar to those from an equivalent supercomputer software simulation,” says Dr. Sacha van Albada, lead author of this study and leader of the Theoretical Neuroanatomy group at the Jülich Research Centre, Germany. “The ability to run large-scale detailed neural networks quickly and at low power consumption will advance robotics research and facilitate studies on learning and brain disorders.”

The human brain is extremely complex, comprising 100 billion interconnected brain cells. We understand how individual neurons and their components behave and communicate with each other and on the larger scale, which areas of the brain are used for sensory perception, action and cognition. However, we know less about the translation of neural activity into behavior, such as turning thought into muscle movement.

Supercomputer software has helped by simulating the exchange of signals between neurons, but even the best software run on the fastest supercomputers to date can only simulate 1% of the human brain.

“It is presently unclear which computer architecture is best suited to study whole-brain networks efficiently. The European Human Brain Project and Jülich Research Centre have performed extensive research to identify the best strategy for this highly complex problem. Today’s supercomputers require several minutes to simulate one second of real time, so studies on processes like learning, which take hours and days in real time are currently out of reach.” explains Professor Markus Diesmann, co-author, head of the Computational and Systems Neuroscience department at the Jülich Research Centre.

He continues, “There is a huge gap between the energy consumption of the brain and today’s supercomputers. Neuromorphic (brain-inspired) computing allows us to investigate how close we can get to the energy efficiency of the brain using electronics.”

Developed over the past 15 years and based on the structure and function of the human brain, SpiNNaker — part of the Neuromorphic Computing Platform of the Human Brain Project — is a custom-built computer composed of half a million of simple computing elements controlled by its own software. The researchers compared the accuracy, speed and energy efficiency of SpiNNaker with that of NEST–a specialist supercomputer software currently in use for brain neuron-signaling research.

“The simulations run on NEST and SpiNNaker showed very similar results,” reports Steve Furber, co-author and Professor of Computer Engineering at the University of Manchester, UK. “This is the first time such a detailed simulation of the cortex has been run on SpiNNaker, or on any neuromorphic platform. SpiNNaker comprises 600 circuit boards incorporating over 500,000 small processors in total. The simulation described in this study used just six boards–1% of the total capability of the machine. The findings from our research will improve the software to reduce this to a single board.”

Van Albada shares her future aspirations for SpiNNaker, “We hope for increasingly large real-time simulations with these neuromorphic computing systems. In the Human Brain Project, we already work with neuroroboticists who hope to use them for robotic control.”

Before getting to the link and citation for the paper, here’s a description of SpiNNaker’s hardware from the ‘Spiking neural netowrk’ Wikipedia entry, Note: Links have been removed,

Neurogrid, built at Stanford University, is a board that can simulate spiking neural networks directly in hardware. SpiNNaker (Spiking Neural Network Architecture) [emphasis mine], designed at the University of Manchester, uses ARM processors as the building blocks of a massively parallel computing platform based on a six-layer thalamocortical model.[5]

Now for the link and citation,

Performance Comparison of the Digital Neuromorphic Hardware SpiNNaker and the Neural Network Simulation Software NEST for a Full-Scale Cortical Microcircuit Model by
Sacha J. van Albada, Andrew G. Rowley, Johanna Senk, Michael Hopkins, Maximilian Schmidt, Alan B. Stokes, David R. Lester, Markus Diesmann, and Steve B. Furber. Neurosci. 12:291. doi: 10.3389/fnins.2018.00291 Published: 23 May 2018

As noted earlier, this is an open access paper.

Embedded AI (artificial intelligence) with a variant of a memristor?

I don’t entirely get how ReRAM (resistive random access memory) is a variant of a memristor but I’m assuming Samuel K. Moore knows what he’s writing about since his May 16, 2018 posting is on the Nanoclast blog (hosted by the IEEE [Institute of Electrical and Electronics Engineers]), Note: Links have been removed,

Resistive RAM technology developer Crossbar says it has inked a deal with aerospace chip maker Microsemi allowing the latter to embed Crossbar’s nonvolatile memory on future chips. The move follows selection of Crossbar’s technology by a leading foundry for advanced manufacturing nodes. Crossbar is counting on resistive RAM (ReRAM) to enable artificial intelligence systems whose neural networks are housed within the device rather than in the cloud.

ReRAM is a variant of the memristor, a nonvolatile memory device whose resistance can be set or reset by a pulse of voltage. The variant Crossbar qualified for advanced manufacturing is called a filament device. It’s built within the layers above a chip’s silicon, where the IC’s interconnects go, and it’s made up of three layers: from top to bottom—silver, amorphous silicon, and tungsten. Voltage across the amorphous silicon causes a filament of silver atoms to cross the gap to the tungsten, making the memory cell conductive. Reversing the voltage pushes the silver back into place, cutting off conduction.

“The filament itself is only three to four nanometers wide,” says Sylvain Dubois, vice president of marketing and business development at Crossbar. “So the cell itself will be able to scale below 10-nanometers.” What’s more, the ratio between the current that flows when the device is on to when it is off is 1,000 or higher. …

A May 14, 2018 Crossbar news release describes some of the technical AI challenges,

“The biggest challenge facing engineers for AI today is overcoming the memory speed and power bottleneck in the current architecture to get faster data access while lowering the energy cost,” said Dubois. “By enabling a new, memory-centric non-volatile architecture like ReRAM, the entire trained model or knowledge base can be on-chip, connected directly to the neural network with the potential to achieve massive energy savings and performance improvements, resulting in a greatly improved battery life and a better user experience.”

Crossbar’s May 16, 2018 news release provides more detail about their ‘strategic collaboration’ with Microsemi Products (Note: A link has been removed),

Crossbar Inc., the ReRAM technology leader, announced an agreement with Microsemi Corporation, the largest U.S. commercial supplier of military and aerospace semiconductors, in which Microsemi will license Crossbar’s ReRAM core intellectual property. As part of the agreement, Microsemi and Crossbar will collaborate in the research, development and application of Crossbar’s proprietary ReRAM technology in next generation products from Microsemi that integrate Crossbar’s embedded ReRAM with Microsemi products manufactured at the 1x nm process node.

Military and aerospace, eh?

Announcing the ‘memtransistor’

Yet another advance toward ‘brainlike’ computing (how many times have I written this or a variation thereof in the last 10 years? See: Dexter Johnson’s take on the situation at the end of this post): Northwestern University announced their latest memristor research in a February 21, 2018 news item on Nanowerk,

Computer algorithms might be performing brain-like functions, such as facial recognition and language translation, but the computers themselves have yet to operate like brains.

“Computers have separate processing and memory storage units, whereas the brain uses neurons to perform both functions,” said Northwestern University’s Mark C. Hersam. “Neural networks can achieve complicated computation with significantly lower energy consumption compared to a digital computer.”

A February 21, 2018 Northwestern University news release (also on EurekAlert), which originated the news item, provides more information about the latest work from this team,

In recent years, researchers have searched for ways to make computers more neuromorphic, or brain-like, in order to perform increasingly complicated tasks with high efficiency. Now Hersam, a Walter P. Murphy Professor of Materials Science and Engineering in Northwestern’s McCormick School of Engineering, and his team are bringing the world closer to realizing this goal.

The research team has developed a novel device called a “memtransistor,” which operates much like a neuron by performing both memory and information processing. With combined characteristics of a memristor and transistor, the memtransistor also encompasses multiple terminals that operate more similarly to a neural network.

Supported by the National Institute of Standards and Technology and the National Science Foundation, the research was published online today, February 22 [2018], in Nature. Vinod K. Sangwan and Hong-Sub Lee, postdoctoral fellows advised by Hersam, served as the paper’s co-first authors.

The memtransistor builds upon work published in 2015, in which Hersam, Sangwan, and their collaborators used single-layer molybdenum disulfide (MoS2) to create a three-terminal, gate-tunable memristor for fast, reliable digital memory storage. Memristor, which is short for “memory resistors,” are resistors in a current that “remember” the voltage previously applied to them. Typical memristors are two-terminal electronic devices, which can only control one voltage channel. By transforming it into a three-terminal device, Hersam paved the way for memristors to be used in more complex electronic circuits and systems, such as neuromorphic computing.

To develop the memtransistor, Hersam’s team again used atomically thin MoS2 with well-defined grain boundaries, which influence the flow of current. Similar to the way fibers are arranged in wood, atoms are arranged into ordered domains – called “grains” – within a material. When a large voltage is applied, the grain boundaries facilitate atomic motion, causing a change in resistance.

“Because molybdenum disulfide is atomically thin, it is easily influenced by applied electric fields,” Hersam explained. “This property allows us to make a transistor. The memristor characteristics come from the fact that the defects in the material are relatively mobile, especially in the presence of grain boundaries.”

But unlike his previous memristor, which used individual, small flakes of MoS2, Hersam’s memtransistor makes use of a continuous film of polycrystalline MoS2 that comprises a large number of smaller flakes. This enabled the research team to scale up the device from one flake to many devices across an entire wafer.

“When length of the device is larger than the individual grain size, you are guaranteed to have grain boundaries in every device across the wafer,” Hersam said. “Thus, we see reproducible, gate-tunable memristive responses across large arrays of devices.”

After fabricating memtransistors uniformly across an entire wafer, Hersam’s team added additional electrical contacts. Typical transistors and Hersam’s previously developed memristor each have three terminals. In their new paper, however, the team realized a seven-terminal device, in which one terminal controls the current among the other six terminals.

“This is even more similar to neurons in the brain,” Hersam said, “because in the brain, we don’t usually have one neuron connected to only one other neuron. Instead, one neuron is connected to multiple other neurons to form a network. Our device structure allows multiple contacts, which is similar to the multiple synapses in neurons.”

Next, Hersam and his team are working to make the memtransistor faster and smaller. Hersam also plans to continue scaling up the device for manufacturing purposes.

“We believe that the memtransistor can be a foundational circuit element for new forms of neuromorphic computing,” he said. “However, making dozens of devices, as we have done in our paper, is different than making a billion, which is done with conventional transistor technology today. Thus far, we do not see any fundamental barriers that will prevent further scale up of our approach.”

The researchers have made this illustration available,

Caption: This is the memtransistor symbol overlaid on an artistic rendering of a hypothetical circuit layout in the shape of a brain. Credit; Hersam Research Group

Here’s a link to and a citation for the paper,

Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide by Vinod K. Sangwan, Hong-Sub Lee, Hadallia Bergeron, Itamar Balla, Megan E. Beck, Kan-Sheng Chen, & Mark C. Hersam. Nature volume 554, pages 500–504 (22 February 2018 doi:10.1038/nature25747 Published online: 21 February 2018

This paper is behind a paywall.

The team’s earlier work referenced in the news release was featured here in an April 10, 2015 posting.

Dexter Johnson

From a Feb. 23, 2018 posting by Dexter Johnson on the Nanoclast blog (on the IEEE [Institute of Electrical and Electronics Engineers] website),

While this all seems promising, one of the big shortcomings in neuromorphic computing has been that it doesn’t mimic the brain in a very important way. In the brain, for every neuron there are a thousand synapses—the electrical signal sent between the neurons of the brain. This poses a problem because a transistor only has a single terminal, hardly an accommodating architecture for multiplying signals.

Now researchers at Northwestern University, led by Mark Hersam, have developed a new device that combines memristors—two-terminal non-volatile memory devices based on resistance switching—with transistors to create what Hersam and his colleagues have dubbed a “memtransistor” that performs both memory storage and information processing.

This most recent research builds on work that Hersam and his team conducted back in 2015 in which the researchers developed a three-terminal, gate-tunable memristor that operated like a kind of synapse.

While this work was recognized as mimicking the low-power computing of the human brain, critics didn’t really believe that it was acting like a neuron since it could only transmit a signal from one artificial neuron to another. This was far short of a human brain that is capable of making tens of thousands of such connections.

“Traditional memristors are two-terminal devices, whereas our memtransistors combine the non-volatility of a two-terminal memristor with the gate-tunability of a three-terminal transistor,” said Hersam to IEEE Spectrum. “Our device design accommodates additional terminals, which mimic the multiple synapses in neurons.”

Hersam believes that these unique attributes of these multi-terminal memtransistors are likely to present a range of new opportunities for non-volatile memory and neuromorphic computing.

If you have the time and the interest, Dexter’s post provides more context,

Less is more—a superconducting synapse

It seems the US National Institute of Standards and Technology (NIST) is more deeply invested into developing artificial brains than I had realized (See: April 17, 2018 posting). A January 26, 2018 NIST news release on EurekAlert describes the organization’s latest foray into the field,

Researchers at the National Institute of Standards and Technology (NIST) have built a superconducting switch that “learns” like a biological system and could connect processors and store memories in future computers operating like the human brain.

The NIST switch, described in Science Advances, is called a synapse, like its biological counterpart, and it supplies a missing piece for so-called neuromorphic computers. Envisioned as a new type of artificial intelligence, such computers could boost perception and decision-making for applications such as self-driving cars and cancer diagnosis.

A synapse is a connection or switch between two brain cells. NIST’s artificial synapse–a squat metallic cylinder 10 micrometers in diameter–is like the real thing because it can process incoming electrical spikes to customize spiking output signals. This processing is based on a flexible internal design that can be tuned by experience or its environment. The more firing between cells or processors, the stronger the connection. Both the real and artificial synapses can thus maintain old circuits and create new ones. Even better than the real thing, the NIST synapse can fire much faster than the human brain–1 billion times per second, compared to a brain cell’s 50 times per second–using just a whiff of energy, about one ten-thousandth as much as a human synapse. In technical terms, the spiking energy is less than 1 attojoule, lower than the background energy at room temperature and on a par with the chemical energy bonding two atoms in a molecule.

“The NIST synapse has lower energy needs than the human synapse, and we don’t know of any other artificial synapse that uses less energy,” NIST physicist Mike Schneider said.

The new synapse would be used in neuromorphic computers made of superconducting components, which can transmit electricity without resistance, and therefore, would be more efficient than other designs based on semiconductors or software. Data would be transmitted, processed and stored in units of magnetic flux. Superconducting devices mimicking brain cells and transmission lines have been developed, but until now, efficient synapses–a crucial piece–have been missing.

The brain is especially powerful for tasks like context recognition because it processes data both in sequence and simultaneously and stores memories in synapses all over the system. A conventional computer processes data only in sequence and stores memory in a separate unit.

The NIST synapse is a Josephson junction, long used in NIST voltage standards. These junctions are a sandwich of superconducting materials with an insulator as a filling. When an electrical current through the junction exceeds a level called the critical current, voltage spikes are produced. The synapse uses standard niobium electrodes but has a unique filling made of nanoscale clusters of manganese in a silicon matrix.

The nanoclusters–about 20,000 per square micrometer–act like tiny bar magnets with “spins” that can be oriented either randomly or in a coordinated manner.

“These are customized Josephson junctions,” Schneider said. “We can control the number of nanoclusters pointing in the same direction, which affects the superconducting properties of the junction.”

The synapse rests in a superconducting state, except when it’s activated by incoming current and starts producing voltage spikes. Researchers apply current pulses in a magnetic field to boost the magnetic ordering, that is, the number of nanoclusters pointing in the same direction. This magnetic effect progressively reduces the critical current level, making it easier to create a normal conductor and produce voltage spikes.

The critical current is the lowest when all the nanoclusters are aligned. The process is also reversible: Pulses are applied without a magnetic field to reduce the magnetic ordering and raise the critical current. This design, in which different inputs alter the spin alignment and resulting output signals, is similar to how the brain operates.

Synapse behavior can also be tuned by changing how the device is made and its operating temperature. By making the nanoclusters smaller, researchers can reduce the pulse energy needed to raise or lower the magnetic order of the device. Raising the operating temperature slightly from minus 271.15 degrees C (minus 456.07 degrees F) to minus 269.15 degrees C (minus 452.47 degrees F), for example, results in more and higher voltage spikes.

Crucially, the synapses can be stacked in three dimensions (3-D) to make large systems that could be used for computing. NIST researchers created a circuit model to simulate how such a system would operate.

The NIST synapse’s combination of small size, superfast spiking signals, low energy needs and 3-D stacking capability could provide the means for a far more complex neuromorphic system than has been demonstrated with other technologies, according to the paper.

NIST has prepared an animation illustrating the research,

Caption: This is an animation of how NIST’s artificial synapse works. Credit: Sean Kelley/NIST

Here’s a link to and a citation for the paper,

Ultralow power artificial synapses using nanotextured magnetic Josephson junctions by Michael L. Schneider, Christine A. Donnelly, Stephen E. Russek, Burm Baek, Matthew R. Pufall, Peter F. Hopkins, Paul D. Dresselhaus, Samuel P. Benz, and William H. Rippard. Science Advances 26 Jan 2018: Vol. 4, no. 1, e1701329 DOI: 10.1126/sciadv.1701329

This paper is open access.

Samuel K. Moore in a January 26, 2018 posting on the Nanoclast blog (on the IEEE [Institute for Electrical and Electronics Engineers] website) describes the research and adds a few technical explanations such as this about the Josephson junction,

In a magnetic Josephson junction, that “weak link” is magnetic. The higher the magnetic field, the lower the critical current needed to produce voltage spikes. In the device Schneider and his colleagues designed, the magnetic field is caused by 20,000 or so nanometer-scale clusters of manganese embedded in silicon. …

Moore also provides some additional links including this one to his November 29, 2017 posting where he describes four new approaches to computing including quantum computing and neuromorphic (brain-like) computing.

New path to viable memristor/neuristor?

I first stumbled onto memristors and the possibility of brain-like computing sometime in 2008 (around the time that R. Stanley Williams and his team at HP Labs first published the results of their research linking Dr. Leon Chua’s memristor theory to their attempts to shrink computer chips). In the almost 10 years since, scientists have worked hard to utilize memristors in the field of neuromorphic (brain-like) engineering/computing.

A January 22, 2018 news item on phys.org describes the latest work,

When it comes to processing power, the human brain just can’t be beat.

Packed within the squishy, football-sized organ are somewhere around 100 billion neurons. At any given moment, a single neuron can relay instructions to thousands of other neurons via synapses—the spaces between neurons, across which neurotransmitters are exchanged. There are more than 100 trillion synapses that mediate neuron signaling in the brain, strengthening some connections while pruning others, in a process that enables the brain to recognize patterns, remember facts, and carry out other learning tasks, at lightning speeds.

Researchers in the emerging field of “neuromorphic computing” have attempted to design computer chips that work like the human brain. Instead of carrying out computations based on binary, on/off signaling, like digital chips do today, the elements of a “brain on a chip” would work in an analog fashion, exchanging a gradient of signals, or “weights,” much like neurons that activate in various ways depending on the type and number of ions that flow across a synapse.

In this way, small neuromorphic chips could, like the brain, efficiently process millions of streams of parallel computations that are currently only possible with large banks of supercomputers. But one significant hangup on the way to such portable artificial intelligence has been the neural synapse, which has been particularly tricky to reproduce in hardware.

Now engineers at MIT [Massachusetts Institute of Technology] have designed an artificial synapse in such a way that they can precisely control the strength of an electric current flowing across it, similar to the way ions flow between neurons. The team has built a small chip with artificial synapses, made from silicon germanium. In simulations, the researchers found that the chip and its synapses could be used to recognize samples of handwriting, with 95 percent accuracy.

A January 22, 2018 MIT news release by Jennifer Chua (also on EurekAlert), which originated the news item, provides more detail about the research,

The design, published today [January 22, 2018] in the journal Nature Materials, is a major step toward building portable, low-power neuromorphic chips for use in pattern recognition and other learning tasks.

The research was led by Jeehwan Kim, the Class of 1947 Career Development Assistant Professor in the departments of Mechanical Engineering and Materials Science and Engineering, and a principal investigator in MIT’s Research Laboratory of Electronics and Microsystems Technology Laboratories. His co-authors are Shinhyun Choi (first author), Scott Tan (co-first author), Zefan Li, Yunjo Kim, Chanyeol Choi, and Hanwool Yeon of MIT, along with Pai-Yu Chen and Shimeng Yu of Arizona State University.

Too many paths

Most neuromorphic chip designs attempt to emulate the synaptic connection between neurons using two conductive layers separated by a “switching medium,” or synapse-like space. When a voltage is applied, ions should move in the switching medium to create conductive filaments, similarly to how the “weight” of a synapse changes.

But it’s been difficult to control the flow of ions in existing designs. Kim says that’s because most switching mediums, made of amorphous materials, have unlimited possible paths through which ions can travel — a bit like Pachinko, a mechanical arcade game that funnels small steel balls down through a series of pins and levers, which act to either divert or direct the balls out of the machine.

Like Pachinko, existing switching mediums contain multiple paths that make it difficult to predict where ions will make it through. Kim says that can create unwanted nonuniformity in a synapse’s performance.

“Once you apply some voltage to represent some data with your artificial neuron, you have to erase and be able to write it again in the exact same way,” Kim says. “But in an amorphous solid, when you write again, the ions go in different directions because there are lots of defects. This stream is changing, and it’s hard to control. That’s the biggest problem — nonuniformity of the artificial synapse.”

A perfect mismatch

Instead of using amorphous materials as an artificial synapse, Kim and his colleagues looked to single-crystalline silicon, a defect-free conducting material made from atoms arranged in a continuously ordered alignment. The team sought to create a precise, one-dimensional line defect, or dislocation, through the silicon, through which ions could predictably flow.

To do so, the researchers started with a wafer of silicon, resembling, at microscopic resolution, a chicken-wire pattern. They then grew a similar pattern of silicon germanium — a material also used commonly in transistors — on top of the silicon wafer. Silicon germanium’s lattice is slightly larger than that of silicon, and Kim found that together, the two perfectly mismatched materials can form a funnel-like dislocation, creating a single path through which ions can flow.

The researchers fabricated a neuromorphic chip consisting of artificial synapses made from silicon germanium, each synapse measuring about 25 nanometers across. They applied voltage to each synapse and found that all synapses exhibited more or less the same current, or flow of ions, with about a 4 percent variation between synapses — a much more uniform performance compared with synapses made from amorphous material.

They also tested a single synapse over multiple trials, applying the same voltage over 700 cycles, and found the synapse exhibited the same current, with just 1 percent variation from cycle to cycle.

“This is the most uniform device we could achieve, which is the key to demonstrating artificial neural networks,” Kim says.

Writing, recognized

As a final test, Kim’s team explored how its device would perform if it were to carry out actual learning tasks — specifically, recognizing samples of handwriting, which researchers consider to be a first practical test for neuromorphic chips. Such chips would consist of “input/hidden/output neurons,” each connected to other “neurons” via filament-based artificial synapses.

Scientists believe such stacks of neural nets can be made to “learn.” For instance, when fed an input that is a handwritten ‘1,’ with an output that labels it as ‘1,’ certain output neurons will be activated by input neurons and weights from an artificial synapse. When more examples of handwritten ‘1s’ are fed into the same chip, the same output neurons may be activated when they sense similar features between different samples of the same letter, thus “learning” in a fashion similar to what the brain does.

Kim and his colleagues ran a computer simulation of an artificial neural network consisting of three sheets of neural layers connected via two layers of artificial synapses, the properties of which they based on measurements from their actual neuromorphic chip. They fed into their simulation tens of thousands of samples from a handwritten recognition dataset commonly used by neuromorphic designers, and found that their neural network hardware recognized handwritten samples 95 percent of the time, compared to the 97 percent accuracy of existing software algorithms.

The team is in the process of fabricating a working neuromorphic chip that can carry out handwriting-recognition tasks, not in simulation but in reality. Looking beyond handwriting, Kim says the team’s artificial synapse design will enable much smaller, portable neural network devices that can perform complex computations that currently are only possible with large supercomputers.

“Ultimately we want a chip as big as a fingernail to replace one big supercomputer,” Kim says. “This opens a stepping stone to produce real artificial hardware.”

This research was supported in part by the National Science Foundation.

Here’s a link to and a citation for the paper,

SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations by Shinhyun Choi, Scott H. Tan, Zefan Li, Yunjo Kim, Chanyeol Choi, Pai-Yu Chen, Hanwool Yeon, Shimeng Yu, & Jeehwan Kim. Nature Materials (2018) doi:10.1038/s41563-017-0001-5 Published online: 22 January 2018

This paper is behind a paywall.

For the curious I have included a number of links to recent ‘memristor’ postings here,

January 22, 2018: Memristors at Masdar

January 3, 2018: Mott memristor

August 24, 2017: Neuristors and brainlike computing

June 28, 2017: Dr. Wei Lu and bio-inspired ‘memristor’ chips

May 2, 2017: Predicting how a memristor functions

December 30, 2016: Changing synaptic connectivity with a memristor

December 5, 2016: The memristor as computing device

November 1, 2016: The memristor as the ‘missing link’ in bioelectronic medicine?

You can find more by using ‘memristor’ as the search term in the blog search function or on the search engine of your choice.

Thanks for the memory: the US National Institute of Standards and Technology (NIST) and memristors

In January 2018 it seemed like I was tripping across a lot of memristor stories . This came from a January 19, 2018 news item on Nanowerk,

In the race to build a computer that mimics the massive computational power of the human brain, researchers are increasingly turning to memristors, which can vary their electrical resistance based on the memory of past activity. Scientists at the National Institute of Standards and Technology (NIST) have now unveiled the long-mysterious inner workings of these semiconductor elements, which can act like the short-term memory of nerve cells.

A January 18, 2018 NIST news release (also on EurekAlert), which originated the news item, fills in the details,

Just as the ability of one nerve cell to signal another depends on how often the cells have communicated in the recent past, the resistance of a memristor depends on the amount of current that recently flowed through it. Moreover, a memristor retains that memory even when electrical power is switched off.

But despite the keen interest in memristors, scientists have lacked a detailed understanding of how these devices work and have yet to develop a standard toolset to study them.

Now, NIST scientists have identified such a toolset and used it to more deeply probe how memristors operate. Their findings could lead to more efficient operation of the devices and suggest ways to minimize the leakage of current.

Brian Hoskins of NIST and the University of California, Santa Barbara, along with NIST scientists Nikolai Zhitenev, Andrei Kolmakov, Jabez McClelland and their colleagues from the University of Maryland’s NanoCenter (link is external) in College Park and the Institute for Research and Development in Microtechnologies in Bucharest, reported the findings (link is external) in a recent Nature Communications.

To explore the electrical function of memristors, the team aimed a tightly focused beam of electrons at different locations on a titanium dioxide memristor. The beam knocked free some of the device’s electrons, which formed ultrasharp images of those locations. The beam also induced four distinct currents to flow within the device. The team determined that the currents are associated with the multiple interfaces between materials in the memristor, which consists of two metal (conducting) layers separated by an insulator.

“We know exactly where each of the currents are coming from because we are controlling the location of the beam that is inducing those currents,” said Hoskins.

In imaging the device, the team found several dark spots—regions of enhanced conductivity—which indicated places where current might leak out of the memristor during its normal operation. These leakage pathways resided outside the memristor’s core—where it switches between the low and high resistance levels that are useful in an electronic device. The finding suggests that reducing the size of a memristor could minimize or even eliminate some of the unwanted current pathways. Although researchers had suspected that might be the case, they had lacked experimental guidance about just how much to reduce the size of the device.

Because the leakage pathways are tiny, involving distances of only 100 to 300 nanometers, “you’re probably not going to start seeing some really big improvements until you reduce dimensions of the memristor on that scale,” Hoskins said.

To their surprise, the team also found that the current that correlated with the memristor’s switch in resistance didn’t come from the active switching material at all, but the metal layer above it. The most important lesson of the memristor study, Hoskins noted, “is that you can’t just worry about the resistive switch, the switching spot itself, you have to worry about everything around it.” The team’s study, he added, “is a way of generating much stronger intuition about what might be a good way to engineer memristors.”

Here’s a link to and a citation for the paper,

Stateful characterization of resistive switching TiO2 with electron beam induced currents by Brian D. Hoskins, Gina C. Adam, Evgheni Strelcov, Nikolai Zhitenev, Andrei Kolmakov, Dmitri B. Strukov, & Jabez J. McClelland. Nature Communications 8, Article number: 1972 (2017) doi:10.1038/s41467-017-02116-9 Published online: 07 December 2017

This is an open access paper.

It might be my imagination but it seemed like a lot of papers from 2017 were being publicized in early 2018.

Finally, I borrowed much of my headline from the NIST’s headline for its news release, specifically, “Thanks for the memory,” which is a rather old song,

Bob Hope and Shirley Ross in “The Big Broadcast of 1938.”

New breed of memristors?

This new ‘breed’ of memristor (a component in brain-like/neuromorphic computing) is a kind of thin film. First, here’s an explanation of neuromorphic computing from the Finnish researchers looking into a new kind of memristor, from a January 10, 2018 news item on Nanowerk,

The internet of things [IOT] is coming, that much we know. But still it won’t; not until we have components and chips that can handle the explosion of data that comes with IoT. In 2020, there will already be 50 billion industrial internet sensors in place all around us. A single autonomous device – a smart watch, a cleaning robot, or a driverless car – can produce gigabytes of data each day, whereas an airbus may have over 10 000 sensors in one wing alone.

Two hurdles need to be overcome. First, current transistors in computer chips must be miniaturized to the size of only few nanometres; the problem is they won’t work anymore then. Second, analysing and storing unprecedented amounts of data will require equally huge amounts of energy. Sayani Majumdar, Academy Fellow at Aalto University, along with her colleagues, is designing technology to tackle both issues.

Majumdar has with her colleagues designed and fabricated the basic building blocks of future components in what are called “neuromorphic” computers inspired by the human brain. It’s a field of research on which the largest ICT companies in the world and also the EU are investing heavily. Still, no one has yet come up with a nano-scale hardware architecture that could be scaled to industrial manufacture and use.

An Aalto University January 10, 2018 press release, which originated the news item, provides more detail about the work,

“The technology and design of neuromorphic computing is advancing more rapidly than its rival revolution, quantum computing. There is already wide speculation both in academia and company R&D about ways to inscribe heavy computing capabilities in the hardware of smart phones, tablets and laptops. The key is to achieve the extreme energy-efficiency of a biological brain and mimic the way neural networks process information through electric impulses,” explains Majumdar.

Basic components for computers that work like the brain

In their recent article in Advanced Functional Materials, Majumdar and her team show how they have fabricated a new breed of “ferroelectric tunnel junctions”, that is, few-nanometre-thick ferroelectric thin films sandwiched between two electrodes. They have abilities beyond existing technologies and bode well for energy-efficient and stable neuromorphic computing.

The junctions work in low voltages of less than five volts and with a variety of electrode materials – including silicon used in chips in most of our electronics. They also can retain data for more than 10 years without power and be manufactured in normal conditions.

Tunnel junctions have up to this point mostly been made of metal oxides and require 700 degree Celsius temperatures and high vacuums to manufacture. Ferroelectric materials also contain lead which makes them – and all our computers – a serious environmental hazard.

“Our junctions are made out of organic hydro-carbon materials and they would reduce the amount of toxic heavy metal waste in electronics. We can also make thousands of junctions a day in room temperature without them suffering from the water or oxygen in the air”, explains Majumdar.

What makes ferroelectric thin film components great for neuromorphic computers is their ability to switch between not only binary states – 0 and 1 – but a large number of intermediate states as well. This allows them to ‘memorise’ information not unlike the brain: to store it for a long time with minute amounts of energy and to retain the information they have once received – even after being switched off and on again.

We are no longer talking of transistors, but ‘memristors’. They are ideal for computation similar to that in biological brains.  Take for example the Mars 2020 Rover about to go chart the composition of another planet. For the Rover to work and process data on its own using only a single solar panel as an energy source, the unsupervised algorithms in it will need to use an artificial brain in the hardware.

“What we are striving for now, is to integrate millions of our tunnel junction memristors into a network on a one square centimetre area. We can expect to pack so many in such a small space because we have now achieved a record-high difference in the current between on and off-states in the junctions and that provides functional stability. The memristors could then perform complex tasks like image and pattern recognition and make decisions autonomously,” says Majumdar.

The probe-station device (the full instrument, left, and a closer view of the device connection, right) which measures the electrical responses of the basic components for computers mimicking the human brain. The tunnel junctions are on a thin film on the substrate plate. Photo: Tapio Reinekoski

Here’s a link to and a citation for the paper,

Electrode Dependence of Tunneling Electroresistance and Switching Stability in Organic Ferroelectric P(VDF-TrFE)-Based Tunnel Junctions by Sayani Majumdar, Binbin Chen, Qi Hang Qin, Himadri S. Majumdar, and Sebastiaan van Dijken. Advanced Functional Materials Vol. 28 Issue 2 DOI: 10.1002/adfm.201703273 Version of Record online: 27 NOV 2017

© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

This paper is behind a paywall.